CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Muti-Chip General Purpose Amplifier
VOLTAGE 45 Volts
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
CH847SPT
CURRENT 0.2 Ampere
FEATURE
* Small surface mounting type. (SC-88/SOT-363)
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Two internal isolated NPN transistors in
one package.
(1)
(6)
SC-88/SOT-363
1.2~1.4
0.65
0.65
2.0~2.2
CONSTRUCTION
* Two NPN transistors in one package.
(4)
0.15~0.35
(3)
1.15~1.35
MARKING
* NF
0.08~0.15
0.1 Min.
C1
B2
5
E2
4
0.8~1.1
0~0.1
2.15~2.45
CIRCUIT
6
TR2
TR1
1
E1
2
B1
3
C2
Dimensions in millimeters
SC-88/SOT-363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
CES
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
collector-base voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open emitter
open collector
−
−
−
−
−
−
−
−
−55
−
−55
MIN.
MAX.
50
45
50
6
200
400
2
300
+150
150
+150
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
RATING CHARACTERISTIC ( CH847SPT )
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
C
= 0; V
CB
= 30 V; T
A
= 150 C
O
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
415
UNIT
K/W
MIN.
−
−
−
110
−
−
0.58
−
−
200
MAX.
15
30
15
630
250
650
0.70
0.77
2.0
−
UNIT
nA
uA
nA
mV
mV
V
V
pF
MHz
I
C
= 0; V
EB
= 4 V
I
C
= 2.0 mA; V
CE
= 5.0V; note 1
I
C
= 10 mA ; I
B
= 0.5 mA
I
C
= 10 mA ; I
B
= 0.5 mA
I
C
= 2.0 mA;V
CE
= 5.0 V
I
C
= 10 mA;V
CE
= 5.0 V
I
E
= i
e
= 0; V
CB
= 10V ; f = 1 MHz
I
C
= 50 mA; V
CE
= 5 V ;
f = 100 MHz
RATING CHARACTERISTIC CURVES ( CH847SPT )
Typical Puls ed Current Gain
vs Collector Curr ent
1200
1000
800
600
25
°
C
125
°
C
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0. 25
0.2
125
°
C
V
CE
= 5.0 V
B= 10
0. 15
0.1
0.0 5
0.1
25
°
C
- 40
°
C
400
- 40
°
C
200
0
0.01
0.03
0.
1 0.03
1
3
10
30
I
C
- COLLECTOR CURRENT (mA)
100
1
10
I
C
- COLLECTOR CURRENT (mA)
100
RATING CHARACTERISTIC CURVES ( CH847SPT )
V
BESAT
- COLLECTOR-EMITTER VOLTAGE (V)
1
- 40 °C
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs C ollect or Current
Base-Emitter ON Voltage vs
Collector Curre nt
1
0.8
0.6
125 C
- 40 C
25 C
0.8
0.6
0.4
B= 10
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
25 °C
125 °C
°
°
°
0.4
V
CE
= 5.0 V
0.2
0.1
1
10
I
C
- COLL ECTOR CURRENT (mA)
40
Collect or-Cutoff Current
vs Ambient Tem perature
I
CBO
- COLLECTOR CURRENT (nA)
10
V
CB
= 45V
CAPACITANCE (pF)
4
3
5
Inp ut and Output Capacitanc e
vs Reverse Bias Voltage
f = 1.0 MHz
1
C te
2
1
0
C ob
0.1
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C )
150
0
4
8
12
16
REVERSE BIAS VOLTAGE (V)
20
V
CE
- COLLECTOR VOLTAGE (V)
10
7
5
150 MHz
175 MHz
CHARACTERISTICS vs vALUE AT T
A
=25 C
O
Cont ours of Constant Gain
Bandwidth Product (f
T
)
Norm alized Coll ect or-Cut off Current
vs Ambient Temperature
1000
100
3
2
125 MHz
100 MHz
75 MHz
10
1
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
1
25
50
75
100
125
T
A
- A MB IE NT TEMP ERATURE (
°
C)
150
RATING CHARACTERISTIC CURVES ( CH847SPT )
Noise Figure vs F requency
10
NF - NOISE FIGURE (dB)
I
C
= 200 uA,
R
S
= 10 k
I
C
= 100 uA,
R
S
= 10 k
I
C
= 1.0 m A,
R
S
= 500
4
I
C
= 1.0 mA,
R
S
= 5.0 k
V
CE
= 5.0V
0
0.0001
0.001
0.01
0.1
1
f - FREQUENCY (MHz)
10
100
NF - NOISE FIGURE (dB)
5
V
CE
= 5.0 V
Wideband N oise Frequenc y
vs S ource Resi st anc e
8
4
3
2
1
BA NDWIDTH = 15.7 kHz
6
I
C
= 100 uA
I
C
= 30 uA
2
I
C
= 10 uA
0
1,000
2,000
5,000
10,000
20,000
50,000
100,000
R
S
-
SOURCE RESISTANCE ( Ohms )
Power Dissipation vs
Ambient Temperature
P
D
- POWER DISSIPATION (mW)
500
400
300
200
100
0
0
25
50
75
100
TEMPERATURE (º C)
125
150
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