CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SCHOTTKY DIODE
VOLTAGE 40 Volts CURRENT 30 mAmperes
APPLICATION
* Ultra high speed switching
CH751WSPT
FEATURE
* Small surface mounting type. (SC-70/SOT-323)
* High speed. (T
RR=
2.0nSec Typ.)
* Suitable for high packing density.
* Maximum total power disspation is 200mW.
* Low forward voltage drop.
(2)
(3)
SC-70/SOT-323
CONSTRUCTION
* Silicon epitaxial planar
1.3±0.1
0.3±0.1
0.65
2.0±0.2
0.65
(1)
WEIGHT
* 0.006 grams ( Approx.)
1.25±0.1
MARKING
* ML
0.05~0.2
0.1Min.
0.8~1.1
0~0.1
2.0~2.45
CIRCUIT
(2)
(1)
(3)
Dimensions in millimeters
SC-70/SOT-323
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 8.3 mSec.
Typical Junction Capacitance between Terminal (Note 1)
Maximum Reverse Recovery Time (Note 2)
Maximum Operating Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
RR
T
J
T
STG
CH751WSPT
40
28
40
30
200
2.0
2.0
-40 to +125
-40 to +125
UNITS
Volts
Volts
Volts
mAmps
mAmps
pF
nSec
o
o
C
C
ELECTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CH751WSPT
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at I
F=
1.0mA
Maximum Average Reverse Current at V
R=
10V
SYMBOL
V
F
I
R
MIN.
-
-
TYP.
295
150
MAX.
370
1000
mVolts
nAmps
UNITS
RATING CHARACTERISTIC CURVES ( CH751WSPT )
FIG. 1 - FORWARD CHARACTERISTICS
1
FORWARD CURRENT, (A)
100m
10m
=1
Ta
o
C
75
FIG. 2 - REVERSE CHARACTERISTICS
10m
REVERSE CURRENT, (A)
1m
100u
10u
1u
100n
10n
o
Ta=125 C
o
100 C
o
75 C
o
50 C
25
o
C
25
o
C
1m
100u
-25
o
C
o
25 C
10u
0
0.2
0.4
0.6
0.8
1.0
1.2
FORWARD VOLTAGE, (V)
0
10
20
REVERSE VOLTAGE, (V)
30
40
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
T
a
=25
o
C
f=1MHz
5.0
2.0
1.0
.5
.2
.1
0
2
4
6
8
10
AVERAGE FORWARD CURRENT, (%)
10
JUNCTION CAPACITANCE , (pF)
120
100
80
60
40
20
0
FIG. 4 - TYPICAL FORWARD CURRENT
DERATING CURVE
12
14
0
25
50
75
100
125
150
REVERSE VOLTAGE, (V)
AMBIENT TEMPERATURE, (
o
C
)
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