CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SCHOTTKY BARRIER DIODE
VOLTAGE 45 Volts CURRENT 0.1 Ampere
CH501S-40PT
APPLICATION
Low power rectification
FEATURE
Small surface mounting type. (SC-79/SOD-523)
Low VF. (VF=0.43V Typ. at 100mA)
High reliability
(1)
SC-79/SOD-523
Cathode
(2)
0.25~0.35
0.75~0.85
CONSTRUCTION
Silicon epitaxial planar
1.1~1.3
MARKING
A
0.5~0.77
0.07~0.17
CIRCUIT
(2)
1.5~1.7
(1)
Dimensions in millimeters
SC-79/SOD-523
MUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
T
STG
CH501S-40PT
45
32
40
0.1
1.0
6.0
+125
-40 to +125
UNITS
Volts
Volts
Volts
Amps
Amps
pF
o
ximum Recurrent Peak Reverse Voltage
ximum RMS Voltage
ximum DC Blocking Voltage
ximum Average Forward Rectified Current
k Forward Surge Current at 8.3 mSec single half sine-wave
ical Junction Capacitance between Terminal (Note 1)
ximum Operating Temperature Range
C
C
age Temperature Range
o
CTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
SYMBOL
V
F
(1)
V
F
(2)
I
R
CH501S-40PT
0.34
0.55
30
UNITS
Volts
Volts
uAmps
ximum Instantaneous Forward Voltage at I
F
(1)
=
10mA
ximum Instantaneous Forward Voltage at I
F
(2)
=
100mA
ximum Average Reverse Current at V
R=
10V
CHARACTERISTIC CURVES ( CH501S-40PT )
FIG. 2 - REVERSE CHARACTERISTICS
10m
o
Ta=125 C
HARACTERISTICS
REVERSE CURRENT, (A)
1m
100u
10u
1u
0.1u
o
75 C
o
25 C
C
0.4
0.5
0.6
0
10
20
30
40
LTAGE, (V)
REVERSE VOLTAGE, (V)
TION CAPACITANCE
AVERAGE FORWARD CURRENT, (%)
120
100
80
60
40
20
0
0
FIG. 4 - TYPICAL FORWARD CURRENT
DERATING CURVE
20
25
30
35
25
50
75
100
o
125
150
LTAGE, (V)
AMBIENT TEMPERATURE, (
C
)
Microchip MCU
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