CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SCHOTTKY BARRIER DIODE
VOLTAGE 40 Volts CURRENT 0.5 Ampere
APPLICATION
* Low power rectification
CH411DPT
FEATURE
.041 (1.05)
.033 (0.85)
SOT-23
(1)
.110 (2.80)
.082 (2.10)
.066 (1.70)
.119 (3.04)
(3)
CONSTRUCTION
* Silicon epitaxial planar
(2)
MARKING
* 05T
.055 (1.40)
.047 (1.20)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
.018 (0.30)
.002 (0.05)
CIRCUIT
(2)
(1)
.045 (1.15)
.033 (0.85)
.019 (0.50)
* Small surface mounting type. (SOT-23)
* Low VF. (VF=0.43V Typ. at 0.5A)
* High reliability
(3)
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 8.3 mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Operating Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
T
STG
Dimensions in inches and (millimeters)
SOT-23
CH411DPT
40
28
20
0.5
3.0
20
+125
-40 to +125
UNITS
Volts
Volts
Volts
Amps
Amps
pF
o
C
C
o
ELECTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at I
F
(1)
=
10mA
Maximum Instantaneous Forward Voltage at I
F
(2)
=
500mA
Maximum Average Reverse Current at V
R=
10V
SYMBOL
V
F
(1)
V
F
(2)
I
R
CH411DPT
0.30
0.50
30
UNITS
Volts
Volts
uAmps
RATING CHARACTERISTIC CURVES ( CH411DPT )
FIG. 1 - FORWARD CHARACTERISTICS
1
FORWARD CURRENT, (A)
100m
10m
1m
100u
10u
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
FORWARD VOLTAGE, (V)
Ta
=1
25
o
75
o
C
C
25
o
C
FIG. 2 - REVERSE CHARACTERISTICS
10m
o
Ta=125 C
REVERSE CURRENT, (A)
1m
o
75 C
-25
o
C
Typ.
pulse measurement
100u
10u
1u
0.1u
o
25 C
Typ.
pulse measurement
0
5
10
15
20
25
30
35
REVERSE VOLTAGE, (V)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE , (pF)
100
10
1
0
5
10
15
20
25
REVERSE VOLTAGE, (V)
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