CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
PNP Switching Transistor
VOLTAGE 40 Volts
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
CH3906VPT
CURRENT 0.2 Ampere
FEATURE
* Small surface mounting type. (SOT-563)
* Low current (Max.=200mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
* High saturation current capability.
* Voltage controlled small signal switch.
(1)
(5)
SOT-563
0.9~1.1
0.15~0.3
(3)
(4)
0.50
0.50
1.5~1.7
CONSTRUCTION
* Two PNP transistors in one package.
1.1~1.3
MARKING
0.5~0.6
0.09~0.18
C1
B2
5
E2
4
CIRCUIT
6
1.5~1.7
TR2
TR1
1
E1
2
B1
3
C2
Dimensions in millimeters
SOT-563
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current DC
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
-40
-40
-5
-200
-200
-100
150
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
2004-07
UNIT
RATING CHARACTERISTIC CURVES ( CH3906VPT )
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= - 30 V
I
C
= 0; V
EB
= 6 V
V
CE
= -1V; note 1
I
C
= -0.1mA
I
C
= -1mA
I
C
= -10 mA
I
C
= - 50 mA
I
C
= -100 mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise Þgure
I
C
= -10 mA; I
B
= - 1 mA
I
C
= -50 mA; I
B
= - 5 mA
I
C
= -10 mA; I
B
= -1mA
I
C
= -50 mA; I
B
= - 5 mA
I
E
= i
e
= 0; V
CB
= - 5 V ; f = 1 MHz
I
C
= i
c
= 0; V
EB
= -500 mV;
f = 1 MHz
I
C
= 10 mA; V
CE
= - 2 0 V ;
f = 100 MHz
60
80
100
60
30
−
−
-650
−
−
−
250
−
−
300
−
−
-250
-400
-850
-950
4.5
10
−
4
mV
mV
mV
mV
pF
pF
MHz
dB
−
−
MIN.
MAX.
-50
-50
UNIT
nA
nA
I
C
= 100
µA;
V
CE
= - 5 V; R
S
= 1 k
Ω
;
−
f = 10 Hz to 15.7 kHz
−
−
−
−
−
−
Switching times (between 10% and 90% levels);
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= -10 mA; I
Bon
= -1 mA;
I
Boff
= 1 mA
65
35
35
300
225
75
ns
ns
ns
ns
ns
ns
嵌入式系统
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