INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
MJF44H11
DESCRIPTION
·Low
Collector Saturation Voltage-
: V
CE(sat)
= 1.0V(Max.)@ I
C
= 8A
·Fast
Switching Speeds
·Complement
to Type MJF45H11
APPLICATIONS
·Designed
for general purpose power amplification and
switching such as output or driver stages in applications
such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@T
C
=25℃
Collector Power Dissipation
@T
a
=25℃
Junction Temperature
Storage Temperature Range
VALUE
80
5
10
20
36
W
2
150
-55~150
℃
℃
UNIT
V
V
A
A
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance,Junction to Ambient
MAX
3.5
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)
V
BE
(sat)
I
CES
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
Current-Gain—Bandwidth Product
CONDITIONS
I
C
= 30mA; I
B
= 0
I
C
= 8A ;I
B
= 0.4 A
I
C
= 8A ;I
B
= 0.8 A
V
CE
=Rated V
CEO
;
V
EB
= 5V; I
C
= 0
I
C
= 2A ; V
CE
= 1V
I
C
= 4A ; V
CE
= 1V
V
CB
= 10V, f= 0.1MHz
I
C
= 0.5A; V
CE
= 10V; f
test
=20MHz
60
40
MIN
80
MJF44H11
TYP
MAX
UNIT
V
1.0
1.5
1.0
10
V
V
μA
μA
130
50
pF
MHz
Switching Times
t
on
t
s
t
f
Turn-On Time
Storage Time
I
C
= 5A; I
B1
= -I
B2
= 0.5A
Fall Time
0.14
μs
I
C
= 5A; I
B1
= 0.5A
0.3
0.5
μs
μs
isc Website：www.iscsemi.cn
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