SRAM Module, 512KX8, 20ns, CMOS, 0.600 INCH, CERAMIC, DIP-32
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 20 ns |
| JESD-30 代码 | R-XDMA-T32 |
| JESD-609代码 | e0 |
| 内存密度 | 4194304 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 32 |
| 字数 | 524288 words |
| 字数代码 | 512000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 512KX8 |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| Base Number Matches | 1 |
| WS512K8-20CIA | WS512K8-20CMA | WS512K8-25CMA | WS512K8-45CMA | WS512K8-35CIA | WS512K8-35CMA | WS512K8-25CIA | WS512K8-45CIA | |
|---|---|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 512KX8, 20ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 | SRAM Module, 512KX8, 20ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 | SRAM Module, 512KX8, 25ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 | SRAM Module, 512KX8, 45ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 | SRAM Module, 512KX8, 35ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 | SRAM Module, 512KX8, 35ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 | SRAM Module, 512KX8, 25ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 | SRAM Module, 512KX8, 45ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | 3A991.B.2.A | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A991.B.2.A | 3A001.A.2.C | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 20 ns | 20 ns | 25 ns | 45 ns | 35 ns | 35 ns | 25 ns | 45 ns |
| JESD-30 代码 | R-XDMA-T32 | R-XDMA-T32 | R-XDMA-T32 | R-XDMA-T32 | R-XDMA-T32 | R-XDMA-T32 | R-XDMA-T32 | R-XDMA-T32 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
| 字数代码 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 125 °C | 125 °C | 125 °C | 85 °C | 125 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -55 °C | -55 °C | -55 °C | -40 °C | -55 °C | -40 °C | -40 °C |
| 组织 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | MILITARY | MILITARY | MILITARY | INDUSTRIAL | MILITARY | INDUSTRIAL | INDUSTRIAL |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 厂商名称 | - | - | Mercury Systems Inc | Mercury Systems Inc | Mercury Systems Inc | Mercury Systems Inc | Mercury Systems Inc | Mercury Systems Inc |
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