1N4150
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 50 V
• Repetitive peak reverse voltage:max. 75 V
• Repetitive peak forward current: max. 600 mA
• Pb / RoHS Free
HIGH SPEED SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.150 (3.8)
max.
MECHANICAL DATA :
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Power Dissipation
Maximum Repetitive Peak Forward Current
Maximum Surge Forward Current at t = 1s , Tj = 25°C
Maximum Junction Temperature
Storage Temperature Range
25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RRM
V
RM
I
F
P
D
I
FRM
I
FSM
T
J
T
S
Value
75
50
200
500
600
0.5
200
-65 to + 200
Unit
V
V
mA
mW
mA
A
°C
°C
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Reverse Current
Forward Voltage
Diode Capacitance
Symbol
I
R
Test Condition
V
R
= 50 V
V
R
= 50 V , Tj = 150
°C
I
F
= 100 mA
I
F
= 200 mA
f = 1MHz ; V
R
= 0
I
F
= 10 mA to 200 mA
to I
R
= 10 mA to 200 mA;
R
L
= 100
Ω
; measured
at I
R
= 0.1x I
F
Min.
-
-
-
-
-
Typ.
-
-
-
-
-
Max.
0.1
100
0.92
1.0
2.5
Unit
µA
µA
V
pF
V
F
Cd
Reverse Recovery Time
Trr
-
-
4
ns
Page 1 of 2
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( 1N4150 )
FIG. 1 MAXIMUM FORWARD CURRENT
VERSUS AMBIENT TEMPERATURE
FIG. 2 TYPICAL FORWARD VOLTAGE
400
1000
CONTINUOUS CURRENT, I
F
(mA)
300
Forward Current , I
F
(mA)
100
10
200
1
T
J
= 25
°
C
100
0.1
0
0
100
200
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Ambient Temperature , Ta (°C)
Forward Voltage , V
F
(V)
FIG. 3 TYPICAL DIODE CAPACITANCE AS
A FUNCTION OF REVERSE VOLTAGE
1.2
1.0
Diode Capacitance , Cd (pF)
0.9
0.8
0.7
f = 1MHz;
T
J
= 25
°
C
0.6
0.5
0.4
0
10
20
Reverse Voltage , V
R
(V)
Page 2 of 2
Rev. 02 : March 25, 2005