MITSUBISHI IGBT MODULES
CM50BU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
F
E
H
E
G
R
L
S(4 - Mounting
Holes)
M
GuP
EuP
D
GvP
EvP
GuN
EuN
U
V
C
T
C
Measured
Point
GvN
EvN
P
T
C
Measured
Point
Q
4 - M4 NUTS
J
E
J
H
K
F
G
V
T
U
N
L
TAB#110 t=0.5
V
W
X
P
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of four
IGBTs in an H-Bridge configura-
tion, with each transistor having a
reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM50BU-24H is a
1200V (V
CES
), 50 Ampere Four-
IGBT Module.
Type
CM
Current Rating
Amperes
50
V
CES
Volts (x 50)
24
GuP
EuP
U
GvP
EvP
V
GuN
EuN
N
GvN
EvN
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
2.83
2.17±0.01
3.58
2.91±0.01
0.43
0.79
0.69
0.75
0.39
0.41
0.05
Millimeters
72.0
55±0.25
91.0
74.0±0.25
11.0
20.0
17.5
19.1
10.0
10.5
1.25
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Inches
0.74
0.02
1.55
0.63
0.57
0.22 Dia.
0.32
1.02
0.59
0.20
1.61
Millimeters
18.7
0.5
39.3
16.0
14.4
5.5 Dia.
8.1
26.0
15.0
5.0
41.0
Mar.2002
MITSUBISHI IGBT MODULES
CM50BU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
c
= 25°C)
Mounting Torque, M4 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
Ratings
-40 to 150
-40 to 125
1200
±20
50
100*
50
100*
400
1.3 ~ 1.7
2.5 ~ 3.5
390
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 5mA, V
CE
= 10V
I
C
= 50A, V
GE
= 15V, T
j
= 25°C
I
C
= 50A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage*
V
CC
= 600V, I
C
= 50A, V
GE
= 15V
I
E
= 50A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6
2.9
2.85
187
–
Max.
1
0.5
7.5
3.7
–
–
3.2
Units
mA
µA
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 600V, I
C
= 50A,
V
GE1
= V
GE2
= 15V,
R
G
= 6.3Ω, Resistive
Load Switching Operation
I
E
= 50A, di
E
/dt = -100A/µs
I
E
= 50A, di
E
/dt = -100A/µs
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.28
Max.
7.5
2.6
1.5
80
200
150
350
300
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Test Conditions
Per IGBT 1/4 Module
Per FWDi 1/4 Module
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
0.025
Max.
0.31
0.7
–
Units
°C/W
°C/W
°C/W
Mar.2002
MITSUBISHI IGBT MODULES
CM50BU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
100
COLLECTOR CURRENT, I
C
, (AMPERES)
80
60
V
GE
= 20V
11
80
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
T
j
= 25
o
C
100
15
COLLECTOR CURRENT, I
C
, (AMPERES)
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
12
4
3
2
1
60
40
20
10
40
20
0
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
0
20
40
60
80
100
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
2
T
j
= 25°C
10
2
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
V
GE
= 0V
8
6
4
2
I
C
= 100A
EMITTER CURRENT, I
E
, (AMPERES)
10
1
C
ies
I
C
= 50A
10
1
10
0
C
oes
C
res
10
-1
I
C
= 20A
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
-2
10
-1
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
di/dt = -100A/µsec
T
j
= 25°C
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
V
CC
= 600V
V
GE
=
±15V
R
G
= 6.3
Ω
T
j
= 125°C
t
f
t
d(off)
10
2
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 50A
SWITCHING TIME, (ns)
15
V
CC
= 400V
V
CC
= 600V
10
2
t
d(on)
t
r
10
2
t
rr
10
1
10
10
1
I
rr
5
10
0
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
1
10
0
10
0
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
2
0
0
50
100
150
200
250
GATE CHARGE, Q
G
, (nC)
Mar.2002
MITSUBISHI IGBT MODULES
CM50BU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
10
-2
10
-1
10
0
10
1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
( IGBT)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-3
10
1
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.31°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.7°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-3
10
-4
10
-3
10
-3
10
-5
TIME, (s)
10
-3
10
-4
10
-3
Mar.2002
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