UM2100
TM
®
ATTENUATOR AND POWER PIN DIODES
2 – 30 MHz
RoHS Compliant Versions Available
DESCRIPTION
UM2100 Series PIN diodes are designed for transmit/receive switch
and attenuator applications in HF band (2-30MHz) and below. As
series configured switches, these long lifetime (25μs typical) diodes
can control up to 2.5 kW, CW in a 50 ohm system. In HF band,
insertion loss is less than 0.25dB and isolation is greater than 32dB
(off-state).
The UM2100 series offers the lowest distortion performance in both
transmit and receive modes. Less than 50 mA forward bias is requires
to obtain an IP3 of 60 dBm at 300 kHz with 1 watt per tone. The
forward biased resistance/reactance vs. frequency characteristics are
flat down to 10 kHz. The capacitance vs. reverse bias voltage
characteristic is flat down to 2 MHz. In attenuator configuration, the
UM2100 produces extremely low distortion at low values of attenuator
control current, and very low insertion loss (0.2dB) in the “0dB”
attenuator state.
KEY FEATURES
HF band (2-30 MHz) PIN
www.MICROSEMI.com
Long Lifetime (25μs typical)
High Power ( 1kW, CW)
High Isolation (32dB)
Low Loss (0.25dB)
Very Low Distortion
(IP3=60dBm)
Voltage ratings to 1000 V
RoHS compliant packaging
1
Available
(use UMX2101B, etc.)
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
A
B
E
C
D
SM
ALL
ALL
ALL
O
Conditions
25 C Pin Temperature
½ in. total length to 25 C
Contact Free Air
25 C Stud Temperature
25 C Stud Temperature
25 C End Cap Temperature
1 us pulse (Single)
Storage Temperature (T
OP
)
Operating Temperature (T
OP
)
O
O
O
(P
D
) Power
Dissapation
(W)
25
12
2.5
25
18.75
15
100KW
(
Θ
)Thermal
Resistance
(
O
C/W)
50V
12.5
The UM2100 series of products can be
supplied with a RoHS compliant finish
(UMX2100) or with a 90/10 Sn/Pb finish.
Consult factory for details.
1
O
6
8
10
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
Soldering temperature:
o
260 C for 10 seconds
maximum
UM2100
UM2100
-65
O
C to + 175
O
C
-65
O
C to + 175
O
C
Copyright
2007
Rev: 2009-01-19
Microsemi
Microwave Products
Page
1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
UM2100
TM
®
ATTENUATOR AND POWER PIN DIODES
2 – 30 MHz
RoHS Compliant Versions Available
VOLTAGE RATINGS
@ 25C (unless otherwise specified)
Part Number
Reverse Voltage @ 10uA (V)
UM2101
100
UM2102
200
UM2104
400
UM2106
600
UM2108
800
UM2110
1000
.
www.
MICROSEMI.com
ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Parameter
Symbol
Conditions
MIN.
Total Capacitance
C
T
V
R
=100V, F= 1 MHz
Series Resistance
R
S
If = 100 mA, F= 2 MHz
Carrier Lifetime
T
L
I
F
= 10 mA/100 V
20
Reverse Current
I
R
V
R
= Voltage rating
Intermodulation Distortion
IP3
P=2W total, I
F
=25mA
50
F1 = 1.999 MHz
F2 = 2.001 MHz
1.0 W/tone
TYPICAL
1.9
1.0
25
60
MAX.
2.5
2.0
10
Units
pF
Ohms
μs
μA
dBm
Intermodulation Distortion Test Circuit
DC current
supply
*
SI
GNAL
GENERAT
OR
*
POWER
SPLT ER
IT
RFC
f
1
SPECTR
ANALYZER
ELECTRICALS
ELECTRICALS
*
f
2
SI
GNAL
GENERAT
OR
*
RFC
* May be controlled with the IEEE-488 bus circuit.
Copyright
2007
Rev: 2009-01-19
Microsemi
Microwave Products
Page
2
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
UM2100
TM
®
ATTENUATOR AND POWER PIN DIODES
2 – 30 MHz
RoHS Compliant Versions Available
TYPICAL RS VS IF
Rs versus If
TYPICAL
102
f = 2 MHz
TYPICAL RS / REACTANCE VS FREQ
www.MICROSEMI.com
RESISTANCE / REACTANCE VERSUS FREQUENCY
TYPICAL
2.0
RESISTANCE / REACTANCE (Ohms)
If = 100 mA
1
10
Rs (Ohms)
1.5
RESISTANCE
1.0
100
0.5
REACTANCE
10
-1
10
-1
10
0
10
1
10
2
0.0
If (mA)
-0.5
102
103
104
105
106
107
FREQUENCY (Hz)
POWER/TONE VS IF
POWER LEVEL/TONE VERSUS FORWARD BIAS CURRENT
TYPICAL
40
F1 = F - 1 KHz
F2 = F + 1 KHz
35
65
70
CAPACITANCE VS VOLTAGE
POWER LEVEL/TONE [dBm]
CAPACITANCE VERSUS VOLTAGE
TYPICAL
20
10 KHz
18
100 KHz
CAPACITANCE (pF)
30
60
IP3 [dBm]
2 MHz
1 MHz
500 KHz250 KHz
150 KHz
16
14
200 KHz
12
10
8
6
4
1 MHz
400 KHz
25
55
20
50
15
100
101
102
45
2
0
10-1
2 MHz
4 MHz
10 MHz
100
101
102
If NEEDED TO OBTAIN AN IM3 OF -60 dBc [mA]
Vr (V)
GRAPHS
Copyright
2007
Rev: 2009-01-19
Microsemi
Microwave Products
Page
3
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
UM2100
TM
®
ATTENUATOR AND POWER PIN DIODES
2 – 30 MHz
RoHS Compliant Versions Available
I/V VS TEMP
www.MICROSEMI.com
MEAN If VERSUS Vf CURVE VERSUS TEMPERATURE
TYPICAL
10
1
100
10-1
10-2
10-3
10-4
10-5
10-6
0.0
0.5
1.0
1.5
150C------------
---------------125C
If (A)
---------------100C
--------------75C
-----25C
Vf (V)
GRAPHS
GRAPHS
Copyright
2007
Rev: 2009-01-19
Microsemi
Microwave Products
Page
4
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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