HY62U8512-(I) Series
64Kx8bit CMOS SRAM
DESCRIPTION
The HY62U8512/HY62U8512-I is a high speed,
low power and 512K bit CMOS SRAM organized
as 65,536 words by 8bit. The HY62U8512 /
HY62U8512-I uses high performance CMOS
process technology and designed for high speed
low power circuit technology. It is particularly well
suited for used in high density low power system
application. This device has a data retention mode
that guarantees data to remain valid at a minimum
power supply voltage of 2.0V.
FEATURES
•
Fully static operation and Tri-state output
•
TTL compatible inputs and outputs
•
Battery backup(L/LL-part)
- 2.0V(min) data retention
•
Standard pin configuration
- 32pin 8x13.4mm Small TSOP-I
(Standard)
Product
Voltage
Speed
Operation
Standby Current(uA)
No.
(V)
(ns)
Current(mA)
L
LL
HY62U8512
3.0
85*/100/120
5
50
10
HY62U8512-I
3.0
85*/100/120
5
50
10
Note 1. E.T. : Extended Temperature, Normal : Normal Temperature
2. Current value is max.
3. * measured with 30pF test load
Temperature
(°C)
0~70(Normal)
-40~85(E.T.)
PIN CONNECTION
A11
A9
A8
A13
/WE
CS2
A15
Vcc
NC
NC
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
/OE
A10
/CS1
DQ8
DQ7
DQ6
DQ5
DQ4
Vss
DQ3
DQ2
DQ1
A0
A1
A2
A3
BLOCK DIAGRAM
A0
ADD INPUT BUFFER
COLUMN DECODER
SENSE AMP
ROW DECODER
I/O1
OUTPUT BUFFER
A15
WRITE DRIVER
MEMORY ARRAY
I/O8
Small TSOP-I
/CS1
CS2
CONTROL
LOGIC
PIN DESCRIPTION
Pin Name
/CS1
CS2
/WE
/OE
Pin Function
Chip Select 1
Chip Select 2
Write Enable
Output Enable
/WE
/OE
Pin Name
A0 ~ A15
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Address Input
Data Input/Output
Power(3.0V)
Ground
ORDERING INFORMATION
Part No.
HY62U8512LST
HY62U8512LLST
HY62U8512LST-I
HY62U8512LLST-I
Speed
85*/100/120
85*/100/120
85*/100/120
85*/100/120
Power
L-part
LL-part
L-part
LL-part
Temp.
Package
Small TSOP-I(Standard)
Small TSOP-I(Standard)
Small TSOP-I(Standard)
Small TSOP-I(Standard)
E.T.
E.T.
Note 1. E.T. : Extended Temperature, Blank : Normal Temperature
2. * measured with 30pF test load.
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.04 /Jan.99
Hyundai Semiconductor
HY62U8512-(I) Series
ABSOLUTE MAXIMUM RATING (1)
Symbol
Vcc, V
IN,
V
OUT
T
A
T
STG
P
D
I
OUT
T
SOLDER
Parameter
Power Supply, Input/Output Voltage
Operating Temperature
Storage Temperature
Power Dissipation
Data Output Current
Lead Soldering Temperature & Time
Rating
-0.5 to 4.6
0 to 70
-40 to 85
-65 to 125
1.0
50
260
•
10
Unit
V
°C
°C
°C
W
mA
°C•sec
Remark
HY62U8512
HY62U8512-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
2.7
0
2.2
-0.3
(1)
Typ.
3.0
0
-
-
Max.
3.3
0
Vcc+0.3
0.4
Unit
V
V
V
V
Note :
1. V
IL
= -1.5V for pulse width less than 30ns at 3.0V
TRUTH TABLE
/CS1
H
X
L
L
L
CS2
X
L
H
H
H
/WE
X
X
H
H
L
/OE
X
X
H
L
X
MODE
Standby
Output Disabled
Read
Write
I/O OPERATION
High-Z
High-Z
High-Z
Data Out
Data In
Note :
1. H=V
IH
, L=V
IL
, X=don't care
Rev.04 /Jan.99
2
HY62U8512-(I) Series
DC ELECTRICAL CHARACTERISTICS
Vcc = 3.0V±10%, T
A
= 0°C to 70°C (Normal)/ -40°C to 85°C (E.T.), unless otherwise specified
Symbol
Parameter
Test Condition
Min. Typ. Max.
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS1 = V
IH
or
-1
-
1
CS2 = V
IL
or
/
OE
=
V
IH
or /WE = V
IL
Icc
Operating Power Supply
/CS1 = V
IL
, CS2 = V
IH,
-
3
5
Current
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
I
CC1
Average Operating Current
/CS1 = V
IL
CS2 = V
IH,
-
20
30
Min Duty Cycle = 100%, I
I/O =
0mA
I
SB
TTL Standby Current
/CS1 = V
IH
or CS2 = V
IL
-
-
0.5
(TTL Input)
I
SB1
Standby Current
/CS1 > Vcc – 0.2V
L
-
1
50
(CMOS Input)
CS2 < 0.2V or
LL
0.5
10
CS2 > Vcc - 0.2V
V
OL
Output Low Voltage
I
OL
= 2.1Ma
-
-
0.4
V
OH
Output High Voltage
I
OH =
-1mA
2.2
-
-
Note : Typical values are at Vcc = 3.0V, T
A
= 25°C
Unit
uA
uA
mA
mA
mA
uA
uA
V
V
AC CHARACTERISTICS
Vcc = 3.0V±10%, T
A
= 0°C to 70°C (Normal)/ -40°C to 85°C (E.T.), unless otherwise specified
-85
-10
-12
# Symbol
Parameter
Min.
Max. Min.
Max. Min
Max.
READ CYCLE
1
tRC
Read Cycle Time
85
-
100
-
120
-
2
tAA
Address Access Time
-
85
-
100
-
120
3
tACS
Chip Select Access Time
-
85
-
100
-
120
4
tOE
Output Enable to Output Valid
-
45
-
50
-
60
5
tCLZ
Chip Select to Output in Low Z
10
-
10
-
20
-
6
tOLZ
Output Enable to Output in Low Z
5
-
5
-
10
-
7
tCHZ
Chip Deselection to Output in High Z
0
30
0
30
0
40
8
tOHZ
Out Disable to Output in High Z
0
30
0
30
0
40
9
tOH
Output Hold from Address Change
10
-
10
-
20
-
WRITE CYCLE
10 tWC
Write Cycle Time
85
-
100
-
120
-
11 tCW
Chip Selection to End of Write
70
-
80
-
100
-
12 tAW
Address Valid to End of Write
70
-
80
-
100
-
13 tAS
Address Set-up Time
0
-
0
-
0
-
14 tWP
Write Pulse Width
55
-
60
-
85
-
15 tWR
Write Recovery Time
0
-
0
-
0
-
16 tWHZ
Write to Output in High Z
0
30
0
30
0
50
17 tDW
Data to Write Time Overlap
40
-
45
-
50
-
18 tDH
Data Hold from Write Time
0
-
0
-
0
-
19 tOW
Output Active from End of Write
5
-
5
-
5
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev.04 /Jan.99
3
HY62U8512-(I) Series
AC TEST CONDITIONS
T
A
= 0°C to 70°C (Normal) / -40°C to 85°C (E.T.), unless otherwise specified
PARAMETER
Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
CL = 100pF + 1TTL Load
CL* = 30pF + 1TTL Load
Note
* : Test load is 30pF for 85ns device.
AC TEST LOADS
TTL
CL(1)
Note : 1 Including jig and scope capacitance
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
C
IN
Input Capacitance
C
OUT
Output Capacitance
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
6
8
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev.04 /Jan.99
4
HY62U8512-(I) Series
TIMING DIAGRAM
READ CYCLE 1
tRC
ADDR
tAA
OE
tOE
tOLZ
CS1
tOH
CS2
tACS
tCLZ
Data
Out
High-Z
Data Valid
tOHZ
tCHZ
Note(READ CYCLE):
1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are
not referenced to output voltage levels
2. At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given
device and from device to device.
3. /WE is high for the read cycle.
READ CYCLE 2
tRC
ADDR
tAA
tOH
Data
Out
Previous Data
Data Valid
tOH
Note(READ CYCLE):
1. /WE is high for the read cycle.
2. Device is continuously selected /CS1 = V
IL,
CS2
=
V
IH.
3. /OE =V
IL
.
Rev.04 /Jan.99
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
