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HY57W2A1620HCLT-SF

产品描述Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, TSOP-54
产品类别存储    存储   
文件大小408KB,共24页
制造商SK Hynix(海力士)
官网地址http://www.hynix.com/eng/
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HY57W2A1620HCLT-SF概述

Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, TSOP-54

HY57W2A1620HCLT-SF规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
零件包装代码TSOP
包装说明TSOP2, TSOP54,.56,32
针数54
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间7 ns
其他特性AUTO/SELF REFRESH
最大时钟频率 (fCLK)100 MHz
I/O 类型COMMON
交错的突发长度1,2,4,8
JESD-30 代码R-PDSO-G54
长度22.238 mm
内存密度134217728 bit
内存集成电路类型SYNCHRONOUS DRAM
内存宽度16
功能数量1
端口数量1
端子数量54
字数8388608 words
字数代码8000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度-25 °C
组织8MX16
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码TSOP2
封装等效代码TSOP54,.56,32
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度)NOT SPECIFIED
电源1.8/2.5,2.5 V
认证状态Not Qualified
刷新周期4096
座面最大高度1.194 mm
自我刷新YES
连续突发长度1,2,4,8,FP
最大待机电流0.0005 A
最大压摆率0.125 mA
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)2.3 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级OTHER
端子形式GULL WING
端子节距0.8 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度10.16 mm
Base Number Matches1

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HY5W2A6C(L/S)F-F / HY57W2A1620HC(L/S)T-F
HY5W26CF-F / HY57W281620HCT-F
4Banks x 2M x 16bits Synchronous DRAM
DESCRIPTION
The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs,
2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld
PCs.
The Hynix HY5W2A6CF is a 134,217,728bit CMOS Synchronous Dynamic Random Access Memory. It
is organized as 4banks of 2,097,152x16.
The Low Power SDRAM provides for programmable options including CAS latency of 1, 2, or 3, READ
or WRITE burst length of 1, 2, 4, 8, or full page, and the burst count sequence(sequential or interleave).
And the Low Power SDRAM also provides for special programmable options including Partial Array Self
Refresh of a quarter bank, a half bank, 1bank, 2banks, or all banks, Temperature Compensated Self
Refresh of 15, 45, 70, or 85 degrees C. A burst of Read or Write cycles in progress can be terminated
by a burst terminate command or can be interrupted and replaced by a new burst Read or Write com-
mand on any cycle(This pipelined design is not restricted by a 2N rule).
Deep Power Down Mode is a additional operating mode for Low Power SDRAM. This mode can achieve
maximum power reduction by removing power to the memory array within each SDRAM. By using this
feature, the system can cut off alomost all DRAM power without adding the cost of a power switch and
giving up mother-board power-line layout flexibility.
FEATURES
Standard SDRAM Protocol
Internal 4bank operation
Voltage : VDD = 2.5V, VDDQ = 1.8V
& 2.5V
LVTTL compatible I/O Interface
Low Voltage interface to reduce I/O power
Low Power Features ( HY5W26CF / HY57W281620HCT series can’t support these features)
- PASR(Partial Array Self Refresh)
- TCSR(Temperature Compensated Self Refresh)
- Deep Power Down Mode
CAS latency of 1, 2, or 3
Packages : 54ball, 0.8mm pitch FBGA / 54pin, TSOP
-25 ~ 70C Operation
128M SDRAM ODERING INFORMATION
Part Number
HY5W2A6C(L/S)F-HF
HY5W26CF-HF
HY57W2A1620HC(L/S)T-HF
HY57W281620HCT-HF
HY5W2A6C(L/S)F-PF
HY5W26CF-PF
HY57W2A1620HC(L/S)T-PF
HY57W281620HCT-PF
HY5W2A6C(L/S)F-SF
HY5W26CF-SF
HY57W2A1620HC(L/S)T-SF
HY57W281620HCT-SF
HHY5W2A6C(L/S)F-BF
HY5W26CF-BF
HY57W2A1620HC(L/S)T-BF
HY57W281620HCT-BF
Clock
CAS
Frequency Latency
133MHz
3
Organization
4banks x 2Mb x 16
Interface
LVTTL
Package
100MHz
2
4banks x 2Mb x 16
LVTTL
54ball FBGA
(HY5xxxxxxF)
54pin TSOP-II
(HY5xxxxxxT)
100MHz
3
4banks x 2Mb x 16
LVTTL
66Mhz
2
4banks x 2Mb x 16
LVTTL
* HY5xxxxxx-B Series can support 40Mhz CL1 and 33Mhz CL1.
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 1.3 / Dec. 01

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