SB320 THRU SB3100
SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage – 20 to 100 V
Forward Current – 3 A
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Metal silicon junction, majority carrier conduction
• High surge capability
• Low power loss, high efficiency
• High current capability, Low forward voltage drop
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Mechanical Data
• Case: JEDEC DO-201AD molded plastic body
• Terminals: Plated axial leads, solderable per MIL-STD-750,
method 2026
• Polarity: color band denotes cathode end
Absolute Maximum Ratings and Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive load, For
capacitive load, derate by 20%.
Parameter
Symbols
SB320 SB330 SB340 SB350 SB360 SB380 SB3100
Units
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375" (9.5 mm) Lead Length
Peak Forward Surge Current, 8.3 ms Single Half-
sine-wave Superimposed on rated load (JEDEC
method)
Maximum Forward Voltage at 3 A DC
1)
Maximum Reverse Current
1)
at Rated DC Blocking Voltage
Typical Junction Capacitance
3)
Typical Thermal Resistance
2)
Operating Junction Temperature Range
Storage Temperature Range
1)
2)
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
3
60
42
60
80
57
80
100
71
100
V
V
V
A
I
FSM
V
F
I
R
C
J
R
θJA
T
J
T
S
- 65 to + 125
0.55
20
250
80
0.7
0.5
10
160
40
- 65 to + 150
- 65 to + 150
O
A
0.85
V
mA
pF
C/W
O
T
A
= 25
O
C
T
A
= 100
O
C
C
C
O
Pulse test: 300 µs pulse width, 1% duty cycle.
Thermal resistance from junction to lead vertical P.C.B. mounted, 0.5" (12.7 mm) lead length with 2.5 X 2.5" (63.5 X 63.5
mm) copper pads.
3)
Measured at 1 MHz and applied reverse voltage of 4 V.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 03/09/2008 J
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