LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
Features
We declare that the material of product compliance with
RoHS requirements.
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G
LBC858AWT1G, BWT1G
CWT1G
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
1
2
SOT– 323 / SC-70
I
C
3
COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
R
θJA
T
J
, T
stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
2
EMITTER
1
BASE
DEVICE MARKING
LBC856AWT1G= 3A; LBC856BWT1G= 3B; LBC857AWT1G= 3E; LBC857BWT1G = 3F;
LBC858AWT1G= 3J; LBC858BWT1G= 3K; LBC858CWT1G= 3L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
Collector–Emitter Breakdown Voltage
(I
C
= –10
µA,
V
EB
= 0)
Collector–Base Breakdown Voltage
(I
C
= – 10
µA)
Emitter–Base Breakdown Voltage
(I
E
= – 1.0
µA)
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
V
(BR)CEO
– 65
– 45
– 30
– 80
– 50
– 30
– 80
– 50
– 30
– 5.0
– 5.0
– 5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
– 15
– 4.0
v
V
(BR)CES
v
V
(BR)CBO
v
V
(BR)EBO
v
nA
µA
Collector Cutoff Current (V
CB
= – 30 V)
(V
CB
= – 30 V, T
A
= 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
I
CBO
1/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= –10
µA,
V
CE
= –5.0 V)
(I
C
= –2.0 mA, V
CE
= –5.0 V)
LBC856A, LBC857A, LBC858A
LBC856B,LBC857B, LBC858B
LBC858C,
LBC856A, LBC857A, LBC858A
LBC856B,LBC857B, LBC858B
LBC858C,
h
FE
Collector–Emitter Saturation Voltage (I
C
= –10 mA, I
B
= – 0.5 mA)
Collector–Emitter Saturation Voltage
(I
C
= –100 mA, I
B
= – 5.0 mA)
Base–Emitter Saturation Voltage (I
C
= –10 mA, I
B
= –0.5 mA)
Base–Emitter Saturation Voltage
(I
C
= –100 mA, I
B
= –5.0 mA)
Base–Emitter Voltage (I
C
= –2.0 mA, V
CE
= –5.0 V)
Base–Emitter Voltage
(I
C
= –10 mA, V
CE
= –5.0 V)
V
V
V
CE(sat)
BE(sat)
BE(on)
—
—
—
125
220
420
—
—
—
—
– 0.6
—
90
150
270
180
290
520
—
—
– 0.7
– 0.9
—
—
—
—
—
250
475
800
– 0.3
– 0.65
—
—
– 0.75
– 0.82
—
V
V
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= – 10 mA, V
CE
= – 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= – 10 V, f = 1.0 MHz)
Noise Figure
(I
C
= – 0.2 mA,V
CE
= – 5.0 V
dc
, R
S
= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz)
f
T
C
ob
NF
100
—
––
—
—
––
—
4.5
10
MHz
pF
dB
ORDERING INFORMATION
( Pb– Free )
Device
LBC856AWT1G_S
LBC856AWT3G_S
Package
SOT-23
SOT-23
Shipping
3000/Tape & Reel
10000/Tape & Reel
2/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G
LBC857/LBC858
2.0
–1.0
h
FE
, NORMALIZED DC CURRENT GAIN
1.5
V
CE
= –10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
1.0
0.7
V
BE(on)
@ V
CE
= –10 V
0.5
0.3
V
CE(sat)
@ I
C
/I
B
= 10
0.2
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
0
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
θ
VB
, TEMPERATURE COEFFICIENT (mV/ °C)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V
CE
, COLLECTOR– EMITTER VOLTAGE (V)
–2.0
1.0
T
A
= 25°C
–1.6
–55°C to +125°C
1.2
1.6
–1.2
2.0
–0.8
I
C
=
–10 mA
I
C
= –50 mA
I
C
= –200 mA
I
C
= –100 mA
2.4
–0.4
I
C
= –20 mA
2.8
0
–0.02
–0.1
–1.0
–10
–20
–0.2
–1.0
–10
–100
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
10.0
400
C
7.0
ib
300
T
A
=25°C
C, CAPACITANCE(pF)
5.0
f
T
, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
200
150
100
80
V
CE
= –10V
T
A
= 25°C
3.0
C
ob
2.0
60
40
30
20
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
1.0
–0.4
–0.6
–1.0
–2.0
–4.0
–6.0
–10
–20 –30 –40
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
3/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G
LBC856
h
FE
, DC CURRENT GAIN (NORMALIZED)
LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G
–1.0
V
CE
= –5.0V
V, VOLTAGE (VOLTS)
T
A
= 25°C
2.0
1.0
0.5
0.2
0
–0.1–0.2
–1.0 –2.0 –5.0 –10 –20 –50 –100–200
I
C
, COLLECTOR CURRENT (mA)
–0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
–0.8
V
BE(sat)
@ I
C
/I
B
=10
–0.6
–0.4
–0.2
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@V
CE
= –5.0 V
T
J
= 25°C
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
Figure 8. “On” Voltage
θ
VB
, TEMPERATURE COEFFICIENT (mV/°C)
–2.0
–1.6
I
C
=
–20mA
–50mA
–100mA –200mA
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–0.2
–1.2
–0.8
–0.4
–10mA
θ
VB
for V
BE
–55°C to 125°C
T
J
= 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
f
T
, CURRENT– GAIN – BANDWIDTH PRODUCT T
40
C, CAPACITANCE (pF)
T
J
= 25°C
C
ib
500
V
CE
= –5.0V
20
200
100
50
20
10
6.0
4.0
2.0
–0.1 –0.2 –0.5
C
ob
–1.0 –2.0
–5.0
–10 –20
–50 –100
–1.0
–10
–100
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
4/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G
r( t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
D=0.5
0.2
SINGLE PULSE
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.05
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Z
θJC
(t) = r(t) R
θJC
R
θJC
= 83.3°C/W MAX
Z
θJA
(t) = r(t) R
θJA
R
θJA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
100
200
500
1.0k 2.0k
5.0k
10k
Figure 13. Thermal Response
–200
1s
I
C
, COLLECTOR CURRENT (mA)
–100
–50
T
A
= 25°C
T
J
= 25°C
3 ms
The safe operating area curves indicate I
C
–V
CE
limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T
J(pk)
< 150°C. T
J(pk)
may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
–10
–5.0
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–2.0
–1.0
–0.5
–10
–30 –45 –65 –100
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
5/6
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