1N6263WS
SILICON SCHOTTKY BARRIER DIODE
for general purpose applications
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
S2
Top View
Marking Code: "S2"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Max. Single Cycle Surge Forward Current (10 s Square wave)
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Symbol
V
RRM
I
FSM
P
tot
T
j
T
S
Value
40
2
400
1)
Unit
V
A
mW
O
200
- 55 to + 200
C
C
O
Valid provided the leads direct at the case are kept at ambient temperature.
Characteristics at T
a
= 25
O
C
Parameter
Reverse Breakdown Voltage
at I
R
= 10
μA
Forward Voltage
at I
F
= 1 mA
at I
F
= 15 mA
Leakage Current
at V
R
= 30 V
Junction Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 5 mA , Recover to 0.1 I
R
Symbol
V
(BR)R
V
F
I
R
C
tot
t
rr
Min.
40
-
-
-
-
-
Max.
-
0.39
0.9
200
2.2
1
Unit
V
V
nA
pF
ns
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006
1N6263WS
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006
1N6263WS
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
H
E
D
A
E
b
p
UNIT
mm
A
1.10
0.80
b
p
0.40
0.25
C
0.15
0.00
D
1.80
1.60
E
1.35
1.15
H
E
2.80
2.30
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006
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