1N4149...1N4454
SILICON EPITAXIAL PLANAR DIODES
for general purpose and switching
Max. 0.5
Max. 0.45
Max. 1.9
Min. 27.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
Black
Cathode Band
XXX
ST
Max. 3.9
Black
Part No.
XXX
Max. 2.9
Min. 27.5
Min. 27.5
Glass Case DO-35
Dimensions in mm
Glass Case DO-34
Dimensions in mm
Absolute Maximum Ratings and Characteristics
(T
a
= 25
O
C unless otherwise specified.)
Peak
Reverse
Voltage
V
RM
(V)
1N4149
1N4151
1N4152
1N4154
1N4447
1N4449
1N4450
1N4451
1N4453
1N4454
1)
2)
1)
1)
Type
Max.
Average
Rectified
Current
I
O
(mA)
150
150
150
150
150
150
150
150
150
150
2)
Max.
Max. Power
Dissipation Junction
Temp.
at 25
O
C
P
tot
(mW)
500
500
400
500
500
500
400
400
400
400
2)
Max. Forward
Voltage
V
F
(V)
1
1
0.55
1
1
1
0.54
0.5
0.55
1
at I
F
(mA)
10
50
0.1
30
20
30
0.5
0.1
0.01
10
Max. Reverse
Current
I
R
(nA)
25
50
50
100
25
25
50
50
50
100
at V
R
(V)
20
50
30
25
20
20
30
30
20
50
Max. Reverse Recovery Time
T
j
(
O
C)
200
200
175
200
200
200
175
175
175
175
t
rr
(ns)
4
2
2
2
4
4
4
10
-
4
Conditions
I
F
= 10 mA, V
R
= 6 V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= 10 mA, V
R
= 6V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= I
R
= 10 mA , to I
R
= 1 mA
I
F
= I
R
= 10 mA , to I
R
= 1 mA
-
I
F
= I
R
= 10 mA , to I
R
= 1 mA
100
75
40
35
100
100
40
40
30
75
1)
These diodes are also available in glass case DO-34. Parameter for diodes in case DO-34: P
tot
= 300 mW, T
j
= 175
O
C
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/06/2007
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