1N4148-K
SILICON EPITAXIAL PLANAR DIODE
Fast switching diode
This diode is also available in MiniMELF case with
the type designation LL4148.
Max. 0.45
Min. 28
Max. 1.75
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.4
Min. 28
Glass Case DO-35 (K)
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
at t = 1 s
at t = 1 ms
at t = 1 µs
Symbol
V
RM
V
R
I
F(AV)
I
FSM
P
tot
T
j
T
S
Value
100
75
200
0.5
1
4
500
1)
Unit
V
V
mA
A
mW
O
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
200
- 65 to + 200
C
C
O
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/08/2008
1N4148-K
Characteristics at T
j
= 25
O
C
Parameter
Forward Voltage
at I
F
= 10 mA
Leakage Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 20 V, T
j
= 150
O
C
Reverse Breakdown Voltage
at I
R
= 100 µA
at I
R
= 5 µA
Capacitance
at V
F
= V
R
= 0
Voltage Rise when Switching ON
tested with 50 mA Forward Pulses
tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
Reverse Recovery Time
from I
F
= 10 mA to I
R
= 1 mA, V
R
= 6 V, R
L
= 100
Ω
Thermal Resistance Junction to Ambient Air
Rectification Efficiency
at f = 100 MHz, V
RF
= 2 V
1)
Symbol
V
F
Min.
-
Max.
1
Unit
V
I
R
I
R
I
R
V
(BR)R
V
(BR)R
C
tot
V
fr
t
rr
R
thA
η
V
-
-
-
100
75
-
200
5
50
-
-
4
nA
µA
µA
V
V
pF
-
2.5
V
-
-
0.45
4
0.35
1)
-
ns
K/mW
-
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
V
RF
=2V
2nF
60
5K
~
~
~
Rectification Efficiency Measurement Circuit
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/08/2008
Vo
1N4148-K
Forward characteristics
mA
10
3
Dynamic forward resistance
versus forward current
1N 4148
1N 4148
10
4
5
2
Tj=25
o
C
f=1KHz
10
2
i
F
10
o
Tj=100 C
o
Tj=25 C
10
3
r
f
5
2
10
2
1
5
2
10
-1
10
5
2
10
-2
0
1
V
F
2V
1
10
-2
10
-1
1
10
I
F
10
2
mA
Admissible power dissipation
versus ambient temperature
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
Relative capacitance
versus reverse voltage
mW
1000
900
800
700
600
500
400
300
200
100
0
0
100
1N 4148
1N 4148
Tj=25
o
C
f=1MHz
1.1
C
tot
(V
R
)
C
tot
(0V)
1.0
P
tot
0.9
0.8
0.7
o
0
0
2
4
6
V
R
8
10 V
200 C
T
amb
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/08/2008
1N4148-K
Leakage current
versus junction temperature
nA
10
4
5
2
1N 4148
10
3
I
R
5
2
10
2
5
2
10
5
V
R
=20V
2
1
0
100
T
j
200 C
o
Admissible repetitive peak forward current
versus pulse duration
A
100
5
4
3
2
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
1N 4148
I
v=tp/T
T=1/fp
I
FRM
tp
10
I
FRM
v=0
5
4
3
2
t
T
0.1
0.2
0.5
1
5
4
3
2
0.1
10
-5
2
5
10
-4
2
5
10
-3
2
5
10
-2
2
5
10
-1
2
5
1
2
5
10 s
t
p
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/08/2008
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