SMUN52XXDW
Elektronische Bauelemente
NPN Multi-Chip
Built-in Resistors Transistor
SOT-363
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.053(1.35)
.045(1.15)
8
o
0
o
The BRT (Bias Resistor Transistor) contains a single transistor
with a monolithic bias network consisting of two resistors; a series
base resistor and a base–emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them
into a single device. In the
SMUN5211DW
series, two BRT devices are
housed in the SOT–363 package which is ideal for low power surface
mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
MARKING DIAGRAM
6
5
4
6
5
4
.096(2.45)
.085(2.15)
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Q
2
R
2
R
1
1
2
R
1
R
2
7X
Q
1
1
3
2
3
.043(1.10)
.035(0.90)
Dimensions in inches and (millimeters)
7X = Device Marking
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Characteristic (One Junction Heated)
Total Device Dissipation
Derate above 25°C
T
A
= 25°C
Symbol
P
D
R
Max
Note 1
187
1.5
670
Max
Note 1
250
2.0
493
188
Note 2
385
3.0
325
208
Note 2
256
2.0
490
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C/W
°C
Thermal Resistance – Junction-to-Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation
Derate above 25°C
T
A
= 25°C
JA
Symbol
P
D
R
θJA
R
θJL
T
J
, T
stg
Thermal Resistance – Junction-to-Ambient
Thermal Resistance – Junction-to-Lead
Junction and Storage Temperature
1. FR–4 @ Minimum Pad
–55 to +150
2. FR–4 @ 1.0 x 1.0 inch Pad
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007
Rev.
A
Page 1 of 8
SMUN52XXDW
Elektronische Bauelemente
NPN Multi-Chip
Built-in Resistors Transistor
DEVICE MARKING , RESISTOR VALUES AND ORDERING INFORMATION
Device
SMUN5211DW
SMUN5212DW
SMUN5213DW
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5236DW
SMUN5237DW
Package
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
Marking
7A
7B
7C
7D
7E
7F
7G
7H
7J
7K
7L
7M
7N
7P
R1(K)
10
22
47
10
10
4.7
1
2.2
4.7
4.7
22
2.2
100
47
R2(K)
10
22
47
47
open
open
1
2.2
4.7
47
47
47
100
22
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3
000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
I
EBO
Emitter-Base Cutoff Current
SMUN5211DW
SMUN5212DW
SMUN5213DW
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5236DW
SMUN5237DW
Collector-Base Breakdown Voltage (I
C
= 10
∝A,
I
E
= 0)
Collector-Emitter Breakdown Voltage(Note 4.)(I
C
= 2.0 mA,I
B
=0)
4. Pulse Test: Pulse Width < 300
∝s,
Duty Cycle < 2.0%
(V
EB
= 6.0 V, I
C
= 0)
Min
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
50
50
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
–
–
Unit
nAdc
nAdc
mAdc
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007
Rev.
A
Page 2 of 8
SMUN52XXDW
Elektronische Bauelemente
NPN Multi-Chip
Built-in Resistors Transistor
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,)
Characteristic
Symbol
ON CHARACTERISTICS(Note
5.)
h
FE
DC Current Gain
SMUN5211DW
(V
CE
= 10 V, I
C
= 5.0 mA)
SMUN5212DW
SMUN5213DW
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5236DW
SMUN5237DW
Collector-Emitter Saturation Voltage (I
C
= 10mA,I
B
= 0.3 mA) V
CE(sat)
(I
C
= 10mA, I
B
= 5mA)
SMUN5230DW/SMUN5231DW
(I
C
= 10mA, I
B
= 1mA)
SMUN5215DW/SMUN5216DW
SMUN5232DW/SMUN5233DW/SMUN5234DW
Output Voltage (on)
V
OL
SMUN5211DW
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
SMUN5212DW
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
SMUN5213DW
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kΩ)
SMUN5236DW
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kΩ)
SMUN5237DW
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
V
OH
(V
CC
= 5.0 V, V
B
= 0.05 V, R
L
= 1.0 kΩ)
SMUN5230DW
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
SMUN5215DW
SMUN5216DW
SMUN5233DW
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
(Continued)
Min
Typ
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
–
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
–
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.25
Unit
Vdc
–
–
–
–
–
–
–
–
–
–
–
–
–
–
4.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
–
Vdc
Vdc
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007
Rev.
A
Page 3 of 8
SMUN52XXDW
Elektronische Bauelemente
NPN Multi-Chip
Built-in Resistors Transistor
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,) (Continued)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS(Note
6.)
Input Resistor
SMUN5211DW
SMUN5212DW
SMUN5213DW
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5236DW
SMUN5237DW
SMUN5211DW/SMUN5212DW
SMUN5213DW/SMUN5236DW
SMUN5214DW/SMUN5215DW
SMUN5216DW/SMUN5230DW
SMUN5231DW/SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5237DW
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
R
1
/R
2
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
Max
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
Unit
kΩ
Resistor Ratio
6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
833°C
0
–50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007
Rev.
A
Page 4 of 8
SMUN52XXDW
Elektronische Bauelemente
NPN Multi-Chip
Built-in Resistors Transistor
TYPICAL ELECTRICAL CHARACTERISTICS –
SMUN5211DW
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
h
FE
, DC CURRENT GAIN (NORMALIZED)
1
1000
100
0.01
0.001
0
20
40
50
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
4
100
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
C ob CAPACITANCE (pF)
10
3
1
2
0.1
1
0.01
0
0
10
20
30
40
50
0.001
0
1
2
3
4
5
6
7
8
9
10
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
10
Figure 5. Output Current versus Input Voltage
V in , INPUT VOLTAGE (VOLTS)
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
22-Jun-2007
Rev.
A
Page 5 of 8
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
