SMG6401
-4.3A, -12V,R
DS(ON)
50m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SMG6401 provide the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
The SMG6401 is universally preferred for all commercial
industrial surface mount application and suited for low
S
2
A
L
3
Top View
SC-59
Dim
A
B
1
Min
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
B
C
D
voltage applications such as DC/DC converters.
D
G
H
C
J
K
Features
* Ultra Low R
DS(ON)
* 1.8V Gate Rated
H
G
J
K
L
* Fast switching speed
Gate
Drain
S
D
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
All Dimension in mm
Source
G
Marking : 6401
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1,2
3
Symbol
V
DS
V
GS
o
I
D
@T
A
=25
C
Ratings
-12
±8
-4.3
-3.4
-12
1.38
0.01
Unit
V
V
A
A
A
W
W/ C
o
o
I
D
@T
A
=70
o
C
I
DM
o
P
D
@T
A
=25
C
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Rthj-a
Ratings
90
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
4
SMG6401
Elektronische Bauelemente
-4.3mA, -12V,R
DS(ON)
50m
Ω
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
o
C
)
Drain-Source Leakage Current (Tj=70
o
C
)
o
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
Min.
-12
_
Typ.
_
Max.
_
_
Unit
V
V/
o
C
V
nA
uA
uA
Test Condition
V
GS
=0V, I
D
=-250uA
Reference to 25
o
C ,I
D
=-1mA
V
DS
=V
GS,
I
D
=-250uA
V
GS
=
±
8V
V
DS
=-16V,V
GS
=0
V
DS
=-12V,V
GS
=0
V
GS
=-4.5V, I
D
=-4.3A
-0.01
_
_
_
_
_
_
_
_
_
_
_
-1.0
±
100
-1
-25
50
85
125
Static Drain-Source On-Resistance
2
R
DS(ON)
_
m
Ω
V
GS
=-2.5V, I
D
=-2.5A
V
GS
=-1.8V, ID=-2A
_
_
Total Gate Charge
2
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
_
_
_
_
_
_
_
15
1.3
4
8
11
54
36
985
180
160
12
24
_
_
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
nC
I
D
=-4A
V
DS
=-12V
V
GS
=-4.5V
_
_
_
_
V
DS
=-10V
I
D
=-1A
nS
V
GS
=-10V
R
G
=3.3
Ω
R
D
=10
Ω
1580
_
_
pF
V
GS
=0V
V
DS
=-15V
f=1.0MHz
_
_
S
V
DS
=-5V, I
D
=-4A
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
Min.
_
Typ.
_
Max.
-1.2
Unit
V
Test Condition
I
S
=-1.2A, V
GS
=0V.
Is=4.0A, V
GS
=0
dl/dt=100A/uS
Reverse Recovery Time
2
Trr
Qrr
_
_
39
26
_
_
nS
nC
Reverse Recovery Charge
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width
≦
300us, dutycycle
≦
2%.
3.Surface mounted on 1 inch
2
copper pad of FR4 board; 270
°C/W
when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of
4
SMG6401
Elektronische Bauelemente
-4.3A, -12V,R
DS(ON)
50m
Ω
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
4
SMG6401
Elektronische Bauelemente
-4.3A, -12V,R
DS(ON)
50m
Ω
P-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
4
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