SMS7401
Elektronische Bauelemente
-2.8A, -30V,R
DS(ON)
115m
Ω
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SMS7401 is the P-channel logic enhancement mode
power field effect transistors are produced using high
cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount
package.
A
L
3
Top View
SOT-23
Dim
A
B
C
D
D
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
S
1
2
B
G
H
C
J
K
G
J
K
L
S
V
Features
* -30V/-2.8A,R
DS(ON)
=115m
Ω
@V
GS
=-10V
*
-30V/-2.5A,R
DS(ON)
=125m
Ω
@V
GS
=-4.5V
*
-30V/-1.5A,R
DS(ON)
=170m
Ω
@V
GS
=-2.5V
*
-30V/-1.0A,R
DS(ON)
=240m
Ω
@V
GS
=-1.8V
* Super High Density Cell Design For
Extremely Low R
DS(ON)
* Exceptional On-Resistance And Max. DC
Current Capability
H
Drain
Gate
Source
All Dimension in mm
D
Applications
*
*
*
*
*
*
*
DC/DC Converter
Power Management in Notebook
DSC
LCD Display Inverter
Portable Equipment
Battery Powered System
Load Switch
G
S
*week code: A~Z(1~26),a~z(27~52)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@T
J
=150
C
Drain-Source Diode Forward Current
Pulsed Drain Current
Total Power Dissipation
Operating Junction and Storage Temperature Range
o
Symbol
V
DS
V
GS
o
I
D
@T
A
= 25
C
o
I
D
@T
A
= 70
C
Ratings
-30
±12
-2.8
-2.1
-1.4
- 8
0.33
0.21
-55~+150
Unit
V
V
A
A
A
W
o
I
S
I
DM
o
P
D
@T
A
=25
C
o
P
D
@T
A
=70
C
Tj, Tstg
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Symbol
Rthj-a
Ratings
105
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 5
SMS7401
Elektronische Bauelemente
-2.8A, -30V,R
DS(ON)
115m
Ω
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
o
Symbol
BV
DSS
V
SD
V
GS(th)
I
GSS
I
DSS
Min.
-30
_
Typ.
_
Max.
_
Unit
V
V
V
nA
uA
uA
Test Condition
V
GS
=0V, I
D
=-250 uA
Forward On Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current
-0.8
_
_
_
_
-1.2
I
D
=-1.2 A,V
GS
=0V.
V
DS
=V
GS,
I
D
=-250 uA
V
GS
=
±12V,V
DS
=0V
V
DS
=-24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V,
Tj=85
o
C
V
GS
=-10V, I
D
=-2.8A
V
GS
=-4.5V, I
D
=-2.5A
V
GS
=-2.5V, I
D
=-1.5A
V
GS
=-1.8V, I
D
=-1A
-0.4
_
_
_
_
-1
±
100
-1
-5
0.115
0.135
0.17
0.24
_
0.105
0.125
0.155
0.21
_
Static Drain-Source On-Resistance
R
DS(ON)
_
_
_
Ω
On-State Drain Current
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Chagre
Gate-Drain Chagre
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
I
D(ON)
Td
(ON)
Tr
Td
(Off)
Tf
Qg
Qgs
Qgd
Ciss
Coss
Crss
Gfs
-4
_
_
_
_
_
_
_
_
_
_
A
V
DS
=- 5V,V
GS
=-4.5V
6
3.9
40
15
5.8
0.8
1.5
380
55
40
4
_
_
_
_
_
_
_
_
_
_
V
DD
=-15V
I
D
=-1A
nS
V
GEN
= -10V
R
G
=3
Ω
R
L
=15
Ω
nC
V
GS
=-4.5V
V
DS
=-15V
I
D
=-2A
pF
V
GS
=0V
V
DS
=-15V
f=1.0MHz
_
_
S
V
DS
=-10V, I
D
=-2.8A
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of
5
SMS7401
Elektronische Bauelemente
-2.8A, -30V,R
DS(ON)
115m
Ω
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
5
SMS7401
Elektronische Bauelemente
-2.8A, -30V,R
DS(ON)
115m
Ω
P-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
5
SMS7401
Elektronische Bauelemente
-2.8A, -30V,R
DS(ON)
115m
Ω
P-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
5
of
5
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