SMG3J14
Elektronische Bauelemente
-3.7A, -30V,R
DS(ON)
85m
Ω
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A
Description
The SMG3J14 provide the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
The SMG3J14 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
S
2
L
SC-59
Dim
Min
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
3
Top View
B
1
A
B
C
D
G
C
H
K
Drain
Gate
Source
D
G
J
H
J
K
L
S
Features
*
High-Speed Switching
*
Simple Drive Requirment
*
Low On-Resistance
All Dimension in mm
D
Marking :
3J14
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
3
Symbol
V
DS
V
GS
I
D
@T
A
=25
C
I
D
@T
A
=70
C
I
DM
P
D
@T
A
=25
C
o
o
o
Ratings
-30
±20
-3.7
-3.0
-10
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W/ C
o
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Ratings
90
Unit
o
Rthj-a
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SMG3J14
Elektronische Bauelemente
-3.7A, -30V,R
DS(ON)
85m
Ω
P-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current (Tj=55
o
C
)
o
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
Min.
-30
_
Typ.
_
Max.
_
_
Unit
V
V/ C
V
nA
uA
uA
o
Test Condition
V
GS
=0V, I
D
=-250uA
Reference to 25 C, I
D
=-1mA
V
DS
=V
GS,
I
D
=-250uA
V
GS
=
±
20V
V
DS
=-30V,V
GS
=0
V
DS
=-24V,V
GS
=0
V
GS
=-10V, I
D
=- 1.35A
o
-0. 02
_
_
_
_
_
_
_
-1.0
_
_
_
_
-3.0
±
100
-1
-25
85
145
170
8
_
_
Static Drain-Source On-Resistance
2
R
DS(ON)
_
_
m
Ω
V
GS
=-4.5V, I
D
=-1.35A
V
GS
=-4.0V, I
D
=-1.35A
I
D
=-3A
V
DS
=-24V
V
GS
=-4.5V
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
_
_
_
_
_
_
_
5
1
3
8
5
20
7
412
91
62
5
nC
_
_
_
_
V
DS
=-15V
I
D
=- 1 A
nS
V
GS
=-10V
R
G
=3.3
Ω
R
D
=15
Ω
660
_
_
pF
V
GS
=0V
V
DS
=-25V
f=1.0MHz
_
_
S
V
DS
=-10V , I
D
=-3A
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Symbol
V
SD
Trr
Qrr
Min.
_
Typ.
_
Max.
-1.2
Unit
V
Test Condition
I
S
=-1.2A, V
GS
=0V.
Is=-3A, V
GS
=0
dl/dt=100A/uS
_
_
20
15
_
_
nS
nC
Reverse Recovery Charge
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width
≦
300us, dutycycle
≦
2%.
3.Surface mounted on 1 inch
2
copper pad of FR4 board; 270
°C/W
when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of 4
SMG3J14
Elektronische Bauelemente
-3.7A, -30V,R
DS(ON)
85m
Ω
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
=-1.35A
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
http://www.SeCoSGmbH.com/
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
4
SMG3J14
Elektronische Bauelemente
-3.7A, -30V,R
DS(ON)
85m
Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
4
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