SMG2402
Elektronische Bauelemente
3.2A,
20V,R
DS(ON)
250m
Ω
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A
L
Description
The SMG2402 provides the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
S
2
3
Top View
SC-59
Dim
B
1
Min
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
A
B
D
G
C
D
C
J
K
Features
*
Fast Switching
*
Ultra Low On-Resistance
H
Drain
Gate
Source
G
H
J
K
L
S
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
G
D
All Dimension in mm
Marking : 2402
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V
Continuous Drain Current, V
GS
@4.5V
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
3
3
Symbol
V
DS
V
GS
I
D
@T
A
=25
C
I
D
@T
A
=70
C
I
DM
P
D
@T
A
=25
C
o
o
o
Ratings
20
±12
3.2
2.6
7.4
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W /
o
C
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Rthj-a
Ratings
90
Unit
o
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
5
SMG2402
Elektronische Bauelemente
3.2A, 20V,R
DS(ON)
250m
Ω
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current (Tj=70
o
C
)
Static Drain-Source On-Resistance
2
o
o
Unless otherwise specified)
Symbol
BV
DSS
Min.
20
_
Typ.
_
Max.
_
_
Unit
V
V/
V
nA
uA
uA
Test Condition
V
GS
=0V, I
D
=250uA
Reference to 25 C, I
D
=1mA
V
DS
=V
GS,
I
D
=250uA
V
GS
=±12V
V
DS
=20V,V
GS
=0
V
DS
=20V,V
GS
=0
V
GS
=4.5V, I
D
=0.93A
o
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
0.1
_
_
_
_
_
_
0.7
_
_
_
_
1.2
±
100
1
10
250
350
_
_
_
_
R
DS(ON)
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
_
m
Ω
V
GS
=2.7V, I
D
=0.47A
I
D
=3.6A
V
DS
=10V
V
GS
=4.5V
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
4.4
0.6
1.9
5.2
37
15
5.7
145
100
50
6
nC
_
_
_
_
_
_
_
V
DS
=10V
I
D
=3.6A
nS
V
GS
= 5V
R
G
=6
Ω
R
D
=2.8
Ω
_
_
_
_
_
_
pF
V
GS
=0V
V
DS
=10V
f=1.0MHz
_
_
S
V
DS
=10V, I
D
=0.47A
Source-Drain Diode
Parameter
Forward On Voltage
2
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)
1
Symbol
V
SD
Is
I
SM
Min.
_
_
Typ.
_
Max.
1.2
1
Unit
V
Test Condition
I
S
=1.6A ,V
GS
=0,Tj=25
C
V
D
=V
G
=0V,V
S
=1.2V
o
_
_
A
_
7.4
A
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width
≦
300us, dutycycle
≦
2%.
3.Surface mounted on 1 inch
2
copper pad of FR4 board; 270
°C/W
when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of
5
SMG2402
Elektronische Bauelemente
3.2A, 20V,R
DS(ON)
250m
Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
5
SMG2402
Elektronische Bauelemente
3.2A, 20V,R
DS(ON)
250m
Ω
N-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
5
SMG2402
Elektronische Bauelemente
3.2A, 20V,R
DS(ON)
250m
Ω
N-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
5
of
5
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