SMG111K
Elektronische Bauelemente
640mA,
55V,R
DS(ON)
2
Ω
N-Channel Enhancement Mode Power Mos.FET
Description
The SMG111K utilized advanced processing
techniques to achieve the lowest possible on-
resistance, extremely efficient and cost-effectiveness
device. The SMG111K is universally used for
all commercial-industrial applications.
A
L
3
Top View
SC-59
Dim
A
B
1
Min
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
S
2
B
C
Features
G
D
D
G
C
J
K
* RoHS Compliant
* Simple Drive Requirement
* Small Package Outline
H
Drain
H
J
K
L
S
Marking :
111E
Gate
Source
All Dimension in mm
D
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
1,2
3
3
Symbol
V
DS
V
GS
I
D
@T
A
=25
C
I
D
@T
A
=70
C
I
DM
P
D
@T
A
=25
C
o
o
o
Ratings
55
±20
640
500
950
1.38
0.01
Unit
V
V
mA
mA
mA
W
W /
o
C
o
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Rthj-a
Ratings
90
Unit
o
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
4
SMG111K
Elektronische Bauelemente
640mA,
55V,R
DS(ON)
2
Ω
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current (Tj=70
o
C
)
Static Drain-Source On-Resistance
o
o
Unless otherwise specified)
Symbol
BV
DSS
Min.
55
_
Typ.
_
Max.
_
_
Unit
V
V/ C
V
nA
uA
uA
o
Test Condition
V
GS
=0V, I
D
=250uA
Reference to 25 C, I
D
=1mA
V
DS
=V
GS,
I
D
=250uA
V
GS
=
±20V
V
DS
=55V,V
GS
=0
V
DS
=40V,V
GS
=0
V
GS
=10V, I
D
=500mA
V
GS
=4.5V, I
D
=500mA
o
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
0.06
_
_
_
_
_
_
0.5
_
_
_
_
2.0
±
10
1
100
2
4
1.6
_
_
_
R
DS(ON)
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
_
Ω
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
1
0.5
0.5
12
10
56
29
32
8
6
600
nC
I
D
=600mA
V
DS
=50V
V
GS
=4.5V
_
_
_
_
_
_
_
V
DD
=30V
I
D
=600mA
nS
V
GS
=10V
R
G
=3.3
Ω
R
D
=52
Ω
_
_
_
50
_
_
pF
V
GS
=0V
V
DS
=25V
f=1.0MHz
_
_
mS
V
DS
=10V, I
D
=600mA
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
DS
Min.
_
Typ.
_
Max.
1.2
Unit
V
Test Condition
I
S
=200mA , V
GS
=0V.
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width
≦
300us, dutycycle
≦
2%.
3.Surface mounted on 1 inch
2
copper pad of FR4 board; 270
°C/W
when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of
4
SMG111K
Elektronische Bauelemente
640mA,
55V,R
DS(ON)
2
Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page
3
of
4
SMG111K
Elektronische Bauelemente
640mA,
55V,R
DS(ON)
2
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
4
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