SMG1333
-550mA, -20V,R
DS(ON)
800m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
SC-59
Dim
A
Min
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
Description
The SMG1333 provide the designer with the best
combination of fast switching, low on-resistance
S
2
L
3
Top View
B
1
B
C
D
and cost-effectiveness.
D
G
H
C
J
K
Features
* Simple Gate Drive
* Small package outline
* Fast switching speed
H
G
J
K
L
Drain
Gate
Source
S
D
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
All Dimension in mm
G
Marking : 1333
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Sate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1,2
3
Symbol
V
DS
V
GS
I
D
@T
A
=25
o
C
I
D
@T
A
=70
o
C
I
DM
P
D
@T
A
=25
o
C
Ratings
-20
±12
-550
-440
-2.5
1
0.008
Unit
V
V
mA
mA
A
W
W/ C
o
o
3
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Rthj-a
Ratings
125
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SMG1333
Elektronische Bauelemente
-550mA, -20V,R
DS(ON)
800m
Ω
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
o
Drain-Source Leakage Current (Tj=25
C
)
o
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
Min.
-20
_
Typ.
_
Max.
_
_
Unit
V
V/
V
nA
uA
uA
Test Condition
V
GS
=0V, I
D
=-250uA
Reference to 25 C,I
D
=-1mA
V
DS
=V
GS,
I
D
=-250uA
V
GS
=
±
12V
V
DS
=-20V,V
GS
=0
V
DS
=-16V,V
GS
=0
V
GS
=-10V, I
D
=-550mA
o
-0.01
_
_
_
_
_
_
-0.5
_
_
_
_
-1.2
±
100
-1
-10
600
800
1000
Drain-Source Leakage Current (Tj=70
o
C
)
Static Drain-Source On-Resistance
2
R
DS(ON)
_
m
Ω
V
GS
=-4.5V, I
D
=-500mA
V
GS
=-2.5V, ID=-300mA
_
_
Total Gate Charge
2
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
_
_
_
_
_
_
_
1.7
0.3
0.4
5
8
10
2
66
25
20
1.0
2.7
_
_
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
2
nC
I
D
=-500mA
V
DS
=-16V
V
GS
=-4.5V
_
_
_
_
V
DS
=-10V
I
D
=-500mA
nS
V
GS
=-5V
R
G
=3.3
Ω
R
D
=20
Ω
105.6
_
_
pF
V
GS
=0V
V
DS
=-10V
f=1.0MHz
_
_
S
V
DS
=-5V, I
D
=-550mA
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
Min.
_
Typ.
_
Max.
-1.2
Unit
V
Test Condition
I
S
=-300mA, V
GS
=0V.
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width
≦
300us, dutycycle
≦
2%.
3.Surface mounted on 1 inch
2
copper pad of FR4 board; 270
°C/W
when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SMG1333
Elektronische Bauelemente
-550mA, -20V,R
DS(ON)
800m
Ω
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
4
SMG1333
Elektronische Bauelemente
-500mA, -20V,R
DS(ON)
800m
Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
4
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