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SBR3060R

产品描述30 A, 60 V, SILICON, RECTIFIER DIODE, DO-203AA
产品类别分立半导体    二极管   
文件大小356KB,共2页
制造商SECOS
官网地址http://www.secosgmbh.com/
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SBR3060R概述

30 A, 60 V, SILICON, RECTIFIER DIODE, DO-203AA

SBR3060R规格参数

参数名称属性值
厂商名称SECOS
Reach Compliance Codecompli
ECCN代码EAR99
二极管类型RECTIFIER DIODE

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SBR3060R
Elektronische Bauelemente
VOLTAGE 60V
30
.0AMP Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-220
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Epitaxial construction
.108
(2.75)
.412
(10.5)
MAX.
3.8
f
+.2
HOLE THRU
.248
(6.3)
.180
(4.6)
.050
(1.27)
.595
(15.1)
MAX.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity: As Marked
* Mounting position: Any
* Weight: 2.24 grams(Approximately)
.051 MAX.
(1.3)
.040 MAX.
(1.0)
.100
(2.54)
.550
(14.0)
.158
(4.0) MIN.
MAX.
.120
(3.05)
PIN 1
PIN 3
+
CASE
PIN 2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(Per Leg)
(Per Device)
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage (I
F
= 15 Amps,T
F
= 25 C, per leg)
Maximum Instantaneous Forward Voltage (I
F
= 15 Amps,T
F
= 125 C, per leg)
Maximum DC Reverse Current
Ta=25
o
C
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note 2)
Voltage Rate Of Chance (Rated V
R
)
Operating Temperature Range
Storage Temperature Range
NOTES:
SYMBOL
V
RRM
V
RSM
V
DC
I
F
I
FSM
V
F
I
R
C
J
JA
dv/dt
T
J
T
STG
SBR3060R
60
60
60
15
30
180
0.68
0.62
0.5
12
1700
2.5
10000
-50
~
+150
-65
~
+175
UNITS
V
V
V
A
A
V
mA
o
Ta=100 C
o
pF
C/W
C
C
V/us
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Thermal Resistance Junction to Case.
01-Jun-2006 Rev. A
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
Page 1 of 2

 
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