MAC97…
Silicon Bidirectional Triode Thyristors
MT2
G
MT1
1.MT1
2.G 3. MT2
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T
J
= 25 C unless otherwise noted.)
O
Parameter
Peak Repetitive Off-state Voltage(Gate Open, T
J
= -40 to
110
O
C)
1)
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC97-4, MAC97A4
MAC97-6, MAC97A6
MAC97-8, MAC97A8
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz (T
C
= 50
O
C)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, T
a
= 110
O
C)
Circuit Fusing Considerations T
J
= -40 to 110
O
C (t = 8.3 ms)
Peak Gate Voltage ( t
≤
2
μs)
Peak Gate Power ( t
≤
2
μs)
Average Gate Power (T
C
= 80
O
C, t
≤
8.3 ms)
Peak Gate Current (t
≤
2
μs)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
Value
Unit
V
DRM
200
400
600
0.8
8
0.26
5
5
0.1
1
-40 to 110
-40 to 150
V
I
T(RMS)
I
TSM
I
2
t
V
GM
P
GM
P
G(AV)
I
GM
T
J
T
S
A
A
A
2
s
V
W
W
A
O
C
C
O
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R
θJC
R
θJA
Max.
75
200
Unit
O
C/W
C/W
O
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 03/03/2006
MAC97…
Characteristics
(T
C
= 25
O
C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted)
Parameter
Peak Bloking Current
1)
V
D
= Rated V
DRM
, T
J
= 110
O
C, Gate Open
Peak On-State Voltage (Either Direction)
(I
TM
= 1.1 A Peak; Pulse Width
≤
2 ms, Duty Cycle
≤
2 %)
Gate Trigger Current (Continuous dc)
(V
D
= 12 V, R
L
= 100 Ohms)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
MAC97
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
MAC97A
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 V, R
L
= 100 Ohms)
MT2(+), G(+) All Types
MT2(+), G(-) All Types
MT2(-), G(-) All Types
MT2(-), G(+) All Types
(V
D
= Rated V
DRM
, R
L
= 10 KOhms ,T
J
= 110
O
C
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) All Types
MT2(-), G(+) All Types
Holding Current (V
D
= 12 Vdc, I
TM
= 200 mA, Gate Open)
Symbol
I
RRM
V
TM
Min.
Typ.
Max.
0.1
1.65
Unit
mA
V
I
GT
10
10
10
10
5
5
5
7
mA
V
GT
0.1
0.1
I
H
2
2
2
2.5
V
5
mA
Gate Controlled Turn-On Time
2
μs
t
gt
(V
D
= Rated V
DRM
, I
TM
= 1 Apk, I
G
= 25 mA)
Critical Rate-of-Rise of Commutation Voltage
(f = 250 Hz, I
TM
= 1 A, Commutating di/dt = 1.5 A/ms, On-State
1.5
V/μs
dv/dt
c
Current Duration=2ms, V
DRM
= 200 V, Gate Unenergized, T
C
= 110
O
C, Gate Source Resistance = 150 Ohms)
Critical Rate-of-Rise of Off Sate Voltage
dv/dt
10
V/μs
(Vpk = Rated V
DRM
, T
C
= 110
O
C,Gate Open, Exponential Method)
1)
V
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant
current source such that the voltage ratings of the devices are exceeded.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 03/03/2006
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