RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
ISR820
THRU
ISR860
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 60 Volts CURRENT 8.0 Amperes
FEATURES
*
*
*
*
*
*
Low switching noise
Low forward voltage drop
Low thermal resistance
High current capability
High surge capabitity
High reliability
ITO-220A
.185(4.7)
.169(4.3)
.134(3.4)
.110(2.8)
MECHANICAL DATA
*
*
*
*
*
Case: ITo-220A molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 2.24 grams
.114(2.9)
.098(2.5)
.406(10.3)
.382(9.7)
.138(3.5)
.122(3.1)
.04MAX.
(1.0)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.020(0.5)
.108(2.75)
.091(2.30)
.602(15.3)
.579(14.7)
.154 (3.9)
.138 (3.5)
.531(13.5)
.492(12.5)
.114(2.9)
.098(2.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.031(0.8)
.016 (0.4)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Derating Case Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
θ
JC
C
J
T
J
T
STG
700
-55 to + 150
-55 to + 150
ISR820 ISR830 ISR835 ISR840 ISR845
20
14
20
30
21
30
35
25
35
40
28
40
8.0
150
2.5
450
45
32
45
ISR850 ISR860 UNITS
50
35
50
60
42
60
Volts
Volts
Volts
Amps
Amps
0
C/ W
pF
0
0
C
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 8.0A DC
Maximum Average Reverse Current
at Rated DC Blocking Voltage
@T
C
= 25 C
@T
C
= 100
o
C
o
SYMBOL
V
F
I
R
ISR820
ISR830 ISR835 ISR840 ISR845
.65
5.0
50
ISR850 ISR860 UNITS
.75
Volts
mAmps
mAmps
2002-11
NOTES : 1. Thermal Resistance Junction to Case.
2. Suffix “R” for Reverse Polarity.
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
RATING AND CHARACTERISTIC CURVES ( ISR820 THRU ISR860 )
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
10
8
ISR
AVERAGE FORWARD CURRENT, (A)
FIG. 2 - TYPICAL REVERSE CHARACTERISTICS
10
INSTANTANEOUS REVERSE CURRENT, (mA)
TC = 150
6
R
IS
82
~IS
850
1.0
TC = 125
4
2
0
0
Single Phase Half Wave
60Hz Inductive or
Resistive Load
R8
0~
4
R8
IS
5
60
TC = 75
.1
TC = 25
50
100
CASE TEMPERATURE, (
150
)
PEAK FORWARD SURGE CURRENT, (A)
FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
.01
155
8.3ms Single Half Sine-Wave
(JEDED Method)
150
145
140
135
130
125
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
.001
0
20
40
60
80
ISR820~ISR845
ISR850~ISR860
100
120
140
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
4000
JUNCTION CAPACITANCE, (pF)
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 5 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
2000
ISR820~ISR845
ISR820~ISR845
10
1000
800
600
400
ISR850~ISR860
ISR850~ISR860
1.0
200
100
.1
0.1
.1
TJ = 25
Pulse Width=300uS
1% Duty Cycle
.4
1.0
4
10
REVERSE VOLTAGE, ( V )
40
80 100
.2
.3
.4
.5
.6
.7
.8
.9 1.0
INSTANTANEOUS FORWARD VOLTAGE, (V)
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