RJK0393DPA
Silicon N Channel Power MOS FET
Power Switching
REJ03G1784-0200
Rev.2.00
Apr 03, 2009
Features
High speed switching
Capable of 4.5V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 3.3 m
Ω
typ. (at V
GS
= 10 V)
•
Pb-free
•
Halogen-free
•
•
•
•
•
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP
E
AR Note 2
Pch
Note3
θch-C
Tch
Tstg
Note 2
Ratings
30
±20
40
160
40
16
25.6
40
3.13
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1784-0200 Rev.2.00 Apr 03, 2009
Page 1 of 6
RJK0393DPA
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.3
4.2
100
3270
430
225
1.4
21
9.5
4.7
13.2
6.0
52
7.1
0.83
23.5
Max
—
±0.1
1
2.5
4.3
5.9
—
—
—
—
—
—
—
—
—
—
—
—
1.08
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 20 A, V
GS
= 10 V
Note4
I
D
= 20 A, V
GS
= 4.5 V
Note4
I
D
= 20 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 40 A
V
GS
= 10 V, I
D
= 20 A,
V
DD
≅
10 V, R
L
= 0.5
Ω,
Rg = 4.7
Ω
IF = 40 A, V
GS
= 0
Note4
IF = 40 A, V
GS
= 0
di
F
/ dt = 100 A/
µs
REJ03G1784-0200 Rev.2.00 Apr 03, 2009
Page 2 of 6
RJK0393DPA
Main Characteristics
Power vs. Temperature Derating
80
1000
10
µs
100
Maximum Safe Operation Area
Channel Dissipation Pch (W)
60
Drain Current I
D
(A)
10
0
µ
s
10
m
s
1m
s
40
10
DC
ti
era
Op
20
Operation in
1 this area is
limited by R
DS(on)
Tc = 25 °C
1 shot Pulse
0.3
1
3
on
0
50
100
150
200
0.1
0.1
10
30
100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
2.9 V
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
4.5 V
2.7 V
Drain Current I
D
(A)
40
40
30
30
25°C
Tc = 75°C
10
–25°C
20
2.5 V
10
20
V
GS
= 2.4 V
Pulse Test
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Registance
R
DS(on)
(mΩ)
Drain to Source Saturation Voltage
V
DS(on)
(mV)
200
Pulse Test
160
100
Pulse Test
50
120
20
10
V
GS
= 4.5 V
5
2
1
1
3
10
30
100
300
1000
10 V
80
I
D
= 20 A
10 A
5A
40
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1784-0200 Rev.2.00 Apr 03, 2009
Page 3 of 6
RJK0393DPA
Static Drain to Source on State Resistance
vs. Temperature
Drain to Source On State Registance
R
DS(on)
(mΩ)
10
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
I
D
= 5 A, 10 A, 20 A
Capacitance C (pF)
8
3000
1000
Coss
6
V
GS
= 4.5 V
300
100
30
10
V
GS
= 0
f = 1 MHz
4
5 A, 10 A, 20 A
Crss
2
0
–25
10 V
0
25
50
75
100 125 150
0
10
20
30
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
50
Reverse Drain Current vs.
Source to Drain Voltage
20
50
Gate to Source Voltage V
GS
(V)
Reverse Drain Current I
DR
(A)
I
D
= 40 A
V
GS
V
DS
V
DD
= 25 V
10 V
10 V
40
16
40
5V
30
12
30
V
GS
= 0, –5 V
20
8
20
10
V
DD
= 25 V
10 V
4
0
50
10
Pulse Test
0
10
20
30
40
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
50
I
AP
= 16 A
V
DD
= 15 V
duty < 0.1%
Rg
≥
50
Ω
40
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1784-0200 Rev.2.00 Apr 03, 2009
Page 4 of 6
RJK0393DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
D=1
1
0.5
0.2
0.1
0.1
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 3.13°C/W, Tc = 25°C
P
DM
PW
T
0.05
0.02
lse
1
0.0
t pu
ho
1s
D=
PW
T
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
E
AR
=
Avalanche Waveform
1
2
L
•
I
AP
2
•
V
DSS
V
DSS –
V
DD
V
(BR)DSS
V
DS
Monitor
L
I
AP
Monitor
I
AP
V
DS
V
DD
I
D
Rg
D. U. T
Vin
15 V
50
Ω
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
90%
td(off)
tf
tr
REJ03G1784-0200 Rev.2.00 Apr 03, 2009
Page 5 of 6
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
