1N5404: 产品描述3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD; 产品类别分立半导体二极管; 文件大小184KB，共2页; 制造商SECOS; 官网地址http://www.secosgmbh.com/

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1N5404概述

3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD

3 A, 400 V, 硅, 整流二极管, DO-201AD

1N5404规格参数

参数名称	属性值
厂商名称	SECOS
包装说明	O-PALF-W2
Reach Compliance Code	compli
其他特性	HIGH RELIABILITY
应用	GENERAL PURPOSE
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	0.95 V
JEDEC-95代码	DO-27
JESD-30 代码	O-PALF-W2
最大非重复峰值正向电流	200 A
元件数量	1
相数	1
端子数量	2
最高工作温度	175 °C
最低工作温度	-65 °C
最大输出电流	3 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
最大重复峰值反向电压	400 V
最大反向电流	5 µA
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL

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1N5400

THRU

1N5408

Elektronische Bauelemente

VOLTAGE 50V ~ 1000V

3.0

AMP Silicon Rectifiers

A suffix of "-C" indicates halogen-free & RoHS Compliant

DO-27

FEATURES

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

.220(5.6)

.197(5.0)

DIA.

1.0(25.4)

MIN.

.375(9.5)

.285(7.2)

MECHANICAL DATA

Case: Molded Plastic

Epoxy: UL 94V-0 Rate Flame Retardant

Lead: Axial Lead, Solder Able per MIL-STD-202,

Method 208 Guaranteed

Polarity: Color Band Denotes Cathode End

Mounting Position: Any

Weight: 1.10 grams

.052(1.3)

.048(1.2)

DIA.

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

Rating 25

C ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=75 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 3.0A

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance RθJA (Note 2)

Operating and Storage Temperature Range T

, T

STG

1N5400 1N5401

1N5402 1N5404

1N5406 1N5407 1N5408

UNITS

100

200

140

200

400

280

400

3.0

200

0.95

5.0

-65 ~ +175

600

420

600

800

560

800

1000

700

1000

C/W

NOTES:

1. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C.

2. Thermal Resistance from Junction to Ambient .375" (9.5mm) Lead Length.

http://www.SeCoSGmbH.com/

01-Jun-2002 Rev. A

Any changing of specification will not be informed individual

Page 1 of 2

1N5404相似产品对比

	1N5404	1N5400	1N5402	1N5401
描述	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
厂商名称	SECOS	SECOS	SECOS	SECOS
包装说明	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	compli	compli	compli	compli
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
应用	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	0.95 V	0.95 V	0.95 V	0.95 V
JEDEC-95代码	DO-27	DO-27	DO-27	DO-27
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
最大非重复峰值正向电流	200 A	200 A	200 A	200 A
元件数量	1	1	1	1
相数	1	1	1	1
端子数量	2	2	2	2
最高工作温度	175 °C	175 °C	175 °C	175 °C
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C
最大输出电流	3 A	3 A	3 A	3 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM
最大重复峰值反向电压	400 V	50 V	200 V	100 V
最大反向电流	5 µA	5 µA	5 µA	5 µA
表面贴装	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL

1N5404

1N5404在线购买

1N5404概述

1N5404规格参数

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