PD - 97284A
Features
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IRLR3114ZPbF
IRLU3114ZPbF
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Logic Level
V
DSS
= 40V
G
S
Description
R
DS(on)
= 4.9mΩ
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
D-Pak
I-Pak
IRLR3114ZPbF IRLU3114ZPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
130
89
42
500
140
0.95
±16
130
260
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
°C
d
Ã
h
g
Thermal Resistance
R
θJC
R
θJA
R
θJA
300
10 lbf in (1.1N m)
y
y
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
Parameter
Typ.
Max.
1.05
40
110
Units
°C/W
j
ij
–––
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
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1
10/01/10
IRLR/U3114ZPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
40
–––
–––
–––
1.0
98
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.032
3.9
5.2
–––
–––
–––
–––
–––
–––
40
12
18
25
140
33
50
4.5
7.5
3810
650
350
2390
580
820
–––
–––
4.9
6.5
2.5
–––
20
250
100
-100
56
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 42A
V
GS
= 4.5V, I
D
= 42A
V V
DS
= V
GS
, I
D
= 100µA
S V
DS
= 10V, I
D
= 42A
µA V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 16V
V
GS
= -16V
I
D
= 42A
nC V
DS
= 20V
V
GS
= 4.5V
V
DD
= 20V
I
D
= 42A
ns R
G
= 3.7Ω
V
GS
= 4.5V
D
Between lead,
e
e
e
e
nH
6mm (0.25in.)
from package
G
pF
S
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
30
27
130
A
500
1.3
45
41
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 42A, V
GS
= 0V
T
J
= 25°C, I
F
= 42A, V
DD
= 20V
di/dt = 100A/µs
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
e
2
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IRLR/U3114ZPbF
1000
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
1000
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
0.1
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
1
100
0.1
1
10
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
Gfs, Forward Transconductance (S)
200
T J = 25°C
150
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
T J = 25°C
100
T J = 175°C
50
V DS = 10V
380µs PULSE WIDTH
0
0
20
40
60
80
100
1
VDS = 15V
≤60µs
PULSE WIDTH
1
2
3
4
5
6
7
0.1
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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IRLR/U3114ZPbF
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
6.0
ID= 42A
VGS, Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
C, Capacitance (pF)
VDS= 32V
VDS= 20V
10000
Ciss
Coss
Crss
VDS= 8.0V
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
100
1msec
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1
10
VDS, Drain-to-Source Voltage (V)
100
VSD, Source-to-Drain Voltage (V)
100
T J = 175°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
VGS = 0V
1.0
DC
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLR/U3114ZPbF
140
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 42A
120
Limited By Package
VGS = 10V
ID, Drain Current (A)
100
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
1
τ
2
τ
3
τ
4
τ
4
0.1
Ri (°C/W)
0.0350
0.2433
0.4851
0.2867
τi
(sec)
0.000013
0.000077
0.001043
0.004658
τ
J
0.01
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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