PD - 93819A
IRHG9110
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level R
DS(on)
IRHG9110
100K Rads (Si)
1.1Ω
IRHG93110
300K Rads (Si)
1.1Ω
I
D
-0.75A
-0.75A
100V, QUAD P-CHANNEL
RAD-Hard HEXFET
™
®
MOSFET TECHNOLOGY
MO-036AB
International Rectifier’s RAD-Hard
TM
HEXFET
®
MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
-0.75
-0.5
-3.0
1.4
0.011
±20
75
-0.75
0.14
2.4
➂
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.63in./1.6mm from case for 10s)
1.3 (Typical)
g
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1
01/03/01
IRHG9110
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
(Per Die)
Parameter
Min
Typ Max Units
—
-0.11
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
—
—
1.2
1.1
-4.0
—
-25
-250
-100
100
15
4.0
4.3
22
19
66
51
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -0.75A
➃
VGS = -12V, ID =- 0.5A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -0.5A
➃
VDS= -80V, VGS= 0V
VDS = -80V,
VGS = 0V, TJ =125°C
VGS = - 20V
VGS = 20V
VGS = -12V, ID = -0.75A,
VDS = -50V
VDD = -50V, ID = -0.75A,
VGS = -12V, RG = 24Ω
BVDSS
Drain-to-Source Breakdown Voltage
-100
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
0.6
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
335
100
22
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-0.75
-3.0
-2.5
90
257
Test Conditions
A
V
nS
nC
T
j
= 25°C, IS = -0.75A, VGS = 0V
➃
Tj = 25°C, IF = -0.75A, di/dt
≥
-100A/µs
VDD
≤
-25V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
17
90
°C/W
Test Conditions
Typical socket mount
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHG9110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
(Per Die)
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-39)
Static Drain-to-Source
➃
On-State Resistance (MO-036AB)
Diode Forward Voltage
➃
100K Rads(Si)
1
300K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
=-80V, V
GS
=0V
V
GS
= -12V, I
D
=-0.5A
V
GS
= -12V, I
D
=-0.5A
V
GS
= 0V, IS = -0.75A
Min
-100
- 2.0
—
—
—
—
—
—
Max
—
- 4.0
-100
100
-25
1.06
1.1
-2.5
Min
-100
-2.0
—
—
—
—
—
—
Max
—
-5.0
-100
100
-25
1.06
1.1
-2.5
1. Part number IRHG9110
2. Part number IRHG93110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
Cu
Br
I
LET
MeV/(mg/cm
2
))
28.0
36.8
59.8
Energy
(MeV)
285
305
343
Range
(µm)
@V
GS
=0V @V
GS
=5V
43.0
-100
-100
39.0
-100
-100
32.6
-60
—
V
DS
(V)
@V
GS
=10V
-100
-70
—
@V
GS
=15V
-70
-50
—
@V
GS
=20V
-60
-40
—
-120
-100
-80
VDS
-60
-40
-20
0
0
5
10
VGS
15
20
Cu
Br
I
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHG9110
Pre-Irradiation
100
-I
D
, Drain-to-Source Current (A)
10
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
100
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-5.0V
1
-5.0V
1
0.1
0.1
0.01
0.1
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
0.01
0.1
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -0.75A
-I
D
, Drain-to-Source Current (A)
2.5
T
J
= 25
°
C
10
2.0
1.5
T
J
= 150
°
C
1.0
0.5
1
5
7
9
V DS = -50V
20µs PULSE WIDTH
11
13
15
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHG9110
600
500
-V
GS
, Gate-to-Source Voltage (V)
V
GS
C
iss
C
rss
C
oss
=
=
=
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
20
I
D
= -0.75A
16
C, Capacitance (pF)
V
DS
=-80V
V
DS
=-50V
V
DS
=-20V
400
Ciss
300
12
8
200
C
oss
C
rss
100
4
0
1
10
100
0
0
2
4
6
FOR TEST CIRCUIT
SEE FIGURE 13
8
10
12
14
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150
°
C
-I
D
, Drain Current (A)
I
1ms
1
T
J
= 25
°
C
1
10ms
0.1
0.0
V
GS
= 0 V
1.0
2.0
3.0
4.0
5.0
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
1000
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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