Power Field-Effect Transistor, 50A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254Z, 3 PIN
| 参数名称 | 属性值 |
| 零件包装代码 | TO-254Z |
| 包装说明 | FLANGE MOUNT, S-CSFM-P3 |
| 针数 | 3 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 200 V |
| 最大漏极电流 (ID) | 50 A |
| 最大漏源导通电阻 | 0.055 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | S-CSFM-P3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | SQUARE |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | PIN/PEG |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| SFF55N20Z | SFF55N20M | |
|---|---|---|
| 描述 | Power Field-Effect Transistor, 50A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254Z, 3 PIN | Power Field-Effect Transistor, 50A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254, 3 PIN |
| 零件包装代码 | TO-254Z | TO-254 |
| 包装说明 | FLANGE MOUNT, S-CSFM-P3 | FLANGE MOUNT, S-CSFM-P3 |
| 针数 | 3 | 3 |
| Reach Compliance Code | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 |
| 配置 | SINGLE | SINGLE |
| 最小漏源击穿电压 | 200 V | 200 V |
| 最大漏极电流 (ID) | 50 A | 50 A |
| 最大漏源导通电阻 | 0.055 Ω | 0.055 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | S-CSFM-P3 | S-CSFM-P3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | SQUARE | SQUARE |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO |
| 端子形式 | PIN/PEG | PIN/PEG |
| 端子位置 | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
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