TSOP753..W, TSOP755..W
www.vishay.com
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
FEATURES
•
•
•
•
•
•
•
•
•
Very low supply current
Photo detector and preamplifier in one package
Compatible also with short burst dataformats
Supply voltage: 2.5 V to 5.5 V
Improved immunity against ambient light
Capable of side or top view
Low profile 2.35 mm
Insensitive to supply voltage ripple and noise
Narrow optical filter to reduce interference from
plasma TV emissions
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
4
3
2
1
21589
MECHANICAL DATA
Pinning:
1, 4 = GND, 2 = V
S
, 3 = OUT
DESCRIPTION
The TSOP753..W, TSOP755..W series are a miniaturized
receiver module for infrared remote control systems. Two
PIN diodes and a preamplifier are assembled on a
leadframe, the epoxy package is designed as an IR filter.
The demodulated output signal can be directly decoded by
a microprocessor. The TSOP753..W is compatible with all
common IR remote control data formats. It is optimized to
suppress almost all spurious pulses from energy saving
fluorescent lamps. The TSOP755..W has an excellent noise
suppression. It is immune to dimmed LCD backlighting and
any fluorescent lamps. AGC3 and AGC5 may also suppress
some data signals in case of continuous transmission.
This component has not been qualified according to
automotive specifications.
PARTS TABLE
CARRIER FREQUENCY
30 kHz
33 kHz
36 kHz
38 kHz
40 kHz
56 kHz
NOISY ENVIRONMENTS AND SHORT BURSTS
(AGC3)
TSOP75330W
TSOP75333W
TSOP75336W
TSOP75338W
TSOP75340W
TSOP75356W
VERY NOISY ENVIRONMENTS AND SHORT
BURSTS (AGC5)
TSOP75530W
TSOP75533W
TSOP75536W
TSOP75538W
TSOP75540W
TSOP75556W
BLOCK DIAGRAM
2
30 k
Ω
Band
pass
Demo-
dulator
V
S
3
Input
AGC
OUT
1, 4
PIN
20445-1
APPLICATION CIRCUIT
17170_7
R
1
IR receiver
V
S
Circuit
C
1
OUT
GND
V
O
µC
GND
+ V
S
Transmitter
with
TSALxxxx
Control circuit
GND
The external components R
1
and C
1
are optional
to improve the robustness against electrical overstress
(typical values are R
1
= 100
Ω,
C
1
= 0.1 µF).
The output voltage V
O
should not be pulled down to a level
below 1 V by the external circuit.
The capacitive load at the output should be less than 2 nF.
Rev. 1.6, 17-Oct-11
1
Document Number: 81997
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSOP753..W, TSOP755..W
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
T
amb
≤
85 °C
P
tot
VALUE
- 0.3 to + 6
3
- 0.3 to (V
S
+ 0.3)
5
100
- 25 to + 85
- 25 to + 85
10
UNIT
V
mA
V
mA
°C
°C
°C
mW
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply voltage
Supply current
Output voltage
Output current
Junction temperature
Storage temperature range
Operating temperature range
Power consumption
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.
ELECTRICAL AND OPTICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Supply voltage
Supply current
E
v
= 0, V
S
= 3.3 V
E
v
= 40 klx, sunlight
E
v
= 0, test signal see fig. 1,
IR diode TSAL6200,
I
F
= 250 mA
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
test signal see fig. 1
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
Angle of half transmission
distance
TEST CONDITION
SYMBOL
V
S
I
SD
I
SH
d
V
OSL
E
e min.
E
e max.
ϕ
1/2
30
± 75
0.3
MIN.
2.5
0.27
0.35
0.45
30
100
0.7
TYP.
MAX.
5.5
0.45
UNIT
V
mA
mA
m
mV
mW/m
2
W/m
2
deg
Transmission distance
Output voltage low
Minimum irradiance
Maximum irradiance
Directivity
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, N = 6 pulses, f = f
0
, t = 10 ms)
0.4
t
po
- Output Pulse Width (ms)
0.35
0.3
0.25
0.2
0.15
Input Burst Length
0.1
0.05
0
0.1
λ
= 950 nm,
optical test signal, fig. 1
1
10
100
1000
10 000
Output Pulse Width
t
pi
*)
T
t
*) t
pi
≥
6/f0 is recommended for optimal function
Output Signal
V
O
V
OH
V
OL
t
d 1)
1)
2)
14337
3/f
0
< t
d
< 9/f
0
t
pi
- 4/f
0
< t
po
< t
pi
+ 6/f
0
t
po 2)
t
20760
E
e
- Irradiance (mW/m²)
Fig. 1 - Output Active Low
Fig. 2 - Pulse Length and Sensitivity in Dark Ambient
Rev. 1.6, 17-Oct-11
2
Document Number: 81997
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSOP753..W, TSOP755..W
www.vishay.com
Vishay Semiconductors
E
e min.
- Threshold Irradiance (mW/m²)
4
Correlation with Ambient Light Sources:
E
e
Optical Test Signal
3.5
10 W/m² = 1.4 kLx (Std. illum. A, T = 2855 K)
10 W/m² = 8.2 kLx (Daylight, T = 5900 K)
3
2.5
2
1.5
1
0.5
0
0.01
Wavelength of Ambient
Illumination:
λ
= 950 nm
600 µs
t = 60 ms
Output Signal,
(see fig. 4)
600 µs
t
94 8134
V
O
V
OH
V
OL
t
on
t
off
t
21585
0.1
1
10
100
E
e
- Ambient DC Irradiance (W/m²)
Fig. 3 - Output Function
Fig. 6 - Sensitivity in Bright Ambient
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1
10
T
on
E
e min.
- Threshold Irradiance (mW/m²)
0.8
1
0.9
0.8
f = 100 Hz
0.7
f = 10 kHz
0.6
f = 20 kHz
0.5
0.4
0.3
0.2
0.1
0
1
10
100
1000
f = 30 kHz
f = f
o
T
on
, T
off
- Output Pulse Width (ms)
T
off
λ
= 950 nm,
Optical Test Signal, Fig. 3
10
2
10
3
10
4
10
5
21586
21584
E
e
- Irradiance (mW/m²)
Vs
RMS
- AC Voltage on DC Supply Voltage (mV)
Fig. 4 - Output Pulse Diagram
Fig. 7 - Sensitivity vs. Supply Voltage Disturbances
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.7
16925
500
E
e min.
/E
e
- Rel. Responsivity
E - Max. Field Strength (V/m)
450
400
350
300
250
200
150
100
50
0
0
500
1000
1500
2000
2500
3000
f = f
0
± 5 %
Δ
f(3 dB) = f
0
/10
0.9
1.1
1.3
20747
f/f
0
- Relative Frequency
f - EMI Frequency (MHz)
Fig. 5 - Frequency Dependence of Responsivity
Fig. 8 - Sensitivity vs. Electric Field Disturbances
Rev. 1.6, 17-Oct-11
3
Document Number: 81997
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSOP753..W, TSOP755..W
www.vishay.com
Vishay Semiconductors
0°
10°
20°
30°
1
0.9
Max. Envelope Duty Cycle
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
f = 38 kHz, E
e
= 2 mW/m²
d
rel
- Relative Transmission Distance
40°
1.0
50°
0.9
0.8
60°
70°
0.7
0.6
0.4
0.2
0
80°
TSOP753..W
TSOP755..W
60
80
100
120
21581
22183-1
Burst Length (number of cycles/burst)
Fig. 9 - Max. Envelope Duty Cycle vs. Burst Length
Fig. 12 - Horizontal Directivity
E
e min.
- Threshold Irradiance (mW/m²)
0.5
0.4
0.3
0.2
0.1
0
- 30
d
rel
- Relative Transmission Distance
0.6
0°
10°
20°
30°
40°
1.0
0.9
0.8
50°
60°
70°
80°
0.6
0.4
0.2
0
0.7
- 10
10
30
50
70
90
21580
21587
T
amb
- Ambient Temperature (°C)
Fig. 10 - Sensitivity vs. Ambient Temperature
Fig. 13 - Vertical Directivity
S (λ)
rel
- Relative Spectral Sensitivity
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
750
800
850
900
950 1000 1050 1100 1150
21425
λ-
Wavelength (nm)
Fig. 11 - Relative Spectral Sensitivity vs. Wavelength
Rev. 1.6, 17-Oct-11
4
Document Number: 81997
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSOP753..W, TSOP755..W
www.vishay.com
SUITABLE DATA FORMAT
The TSOP753..W, TSOP755..W series are designed to
suppress spurious output pulses due to noise or
disturbance signals. Data and disturbance signals can be
distinguished by the devices according to carrier frequency,
burst length and envelope duty cycle. The data signal should
be close to the band-pass center frequency (e.g. 38 kHz)
and fulfill the conditions in the table below.
When a data signal is applied to the TSOP753..W,
TSOP755..W in the presence of a disturbance signal, the
sensitivity of the receiver is reduced to insure that no
spurious pulses are present at the output. Some examples
of disturbance signals which are suppressed are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signals at any frequency
• Strongly or weakly modulated noise from fluorescent
lamps with electronic ballasts (see fig. 14 or fig. 15)
Vishay Semiconductors
IR Signal
0
16920
5
10
15
20
Time (ms)
Fig. 14 - IR Signal from Fluorescent Lamp
with Low Modulation
IR Signal
0
16921
5
10
15
20
Time (ms)
Fig. 15 - IR Signal from Fluorescent Lamp
with High Modulation
TSOP753..W
Minimum burst length
After each burst of length
a minimum gap time is required of
For bursts greater than
a minimum gap time in the data stream is
needed of
Maximum number of continuous short
bursts/second
Recommended for NEC code
Recommended for RC5/RC6 code
Recommended for Sony code
Recommended for XMP format
Recommended for RCMM code
Recommended for RECS-80 code
Suppression of interference from fluorescent
lamps
6 cycles/burst
6 to 35 cycles
≥
10 cycles
35 cycles
> 4 x burst length
2000
yes
yes
no
yes
yes
yes
Most common disturbance signals are
suppressed
TSOP755..W
6 cycles/burst
6 to 24 cycles
≥
10 cycles
24 cycles
> 25 ms
2000
yes
yes
no
yes
yes
yes
Most common disturbance signals are
suppressed
Note
• For data formats with long bursts please see the datasheet for TSOP752..W, TSOP754..W.
Rev. 1.6, 17-Oct-11
5
Document Number: 81997
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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