BT151-500L
SCR, 12 A, 5mA, 500 V, SOT78
Rev. 05 — 2 March 2009
Product data sheet
1. Product profile
1.1 General description
Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
1.2 Features and benefits
High reliability
High surge current capability
High thermal cycling performance
1.3 Applications
Ignition circuits
Motor control
Protection Circuits
Static switching
1.4 Quick reference data
Table 1.
V
DRM
I
T(AV)
I
T(RMS)
Quick reference
Conditions
Min
-
half sine wave;
T
mb
≤
109 °C; see
Figure 3
half sine wave;
T
mb
≤
109 °C; see
Figure 1;
see
Figure 2
V
D
= 12 V; T
j
= 25 °C;
I
T
= 100 mA; see
Figure 8
-
-
Typ
-
-
-
Max
500
7.5
12
Unit
V
A
A
repetitive peak
off-state voltage
average on-state
current
RMS on-state
current
Symbol Parameter
Static characteristics
I
GT
gate trigger current
-
2
5
mA
NXP Semiconductors
BT151-500L
SCR, 12 A, 5mA, 500 V, SOT78
2. Pinning information
Table 2.
Pin
1
2
3
mb
K
A
G
mb
Pinning information
Symbol
Description
cathode
anode
gate
anode
mb
A
G
sym037
Simplified outline
Graphic symbol
K
1 2 3
SOT78
(TO-220AB; SC-46)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BT151-500L
TO-220AB;
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
SC-46
TO-220AB
BT151-500L_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 2 March 2009
2 of 11
NXP Semiconductors
BT151-500L
SCR, 12 A, 5mA, 500 V, SOT78
4. Limiting values
Table 4.
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
dI
T
/dt
I
GM
P
GM
T
stg
T
j
I
TSM
Limiting values
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
average on-state
current
RMS on-state current
rate of rise of on-state
current
peak gate current
peak gate power
storage temperature
junction temperature
non-repetitive peak
on-state current
I2t for fusing
average gate power
peak reverse gate
voltage
half sine wave; t
p
= 8.3 ms; T
j(init)
= 25 °C
half sine wave; t
p
= 10 ms; T
j(init)
= 25 °C; see
Figure 4;
see
Figure 5
t
p
= 10 ms; sine-wave pulse
over any 20 ms period
half sine wave; T
mb
≤
109 °C; see
Figure 3
half sine wave; T
mb
≤
109 °C; see
Figure 1;
see
Figure 2
I
T
= 20 A; I
G
= 50 mA; dI
G
/dt = 50 mA/µs
Conditions
Min
-
-
-
-
-
-
-
-40
-
-
-
-
-
-
Max
500
500
7.5
12
50
2
5
150
125
132
120
72
0.5
5
Unit
V
V
A
A
A/µs
A
W
°C
°C
A
A
A
2
s
W
V
In accordance with the Absolute Maximum Rating System (IEC 60134).
I
2
t
P
G(AV)
V
RGM
25
I
T(RMS)
(A)
20
001aaa954
16
I
T(RMS)
(A)
12
001aaa999
15
8
10
4
5
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
T
mb
(°C)
150
Fig 2.
Fig 1.
RMS on-state current as a function of surge
duration; maximum values
RMS on-state current as a function of mounting
base temperature; maximum values
BT151-500L_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 2 March 2009
3 of 11
NXP Semiconductors
BT151-500L
SCR, 12 A, 5mA, 500 V, SOT78
15
P
tot
(W)
1.9
2.2
10
4
conduction
angle
(degrees)
30
60
90
120
180
0
0
2
4
6
form
factor
a
4
2.8
2.2
1.9
1.57
2.8
003aab830
a = 1.57
5
α
8
I
T(AV)
(A)
Fig 3.
10
3
Total power dissipation as a function of average on-state current; maximum values
001aaa956
I
TSM
(A)
dl
T
/dt limit
10
2
I
T
I
TSM
t
t
p
T
j
initial = 25
°C
max
10
10
−5
10
−4
10
−3
t
p
(s)
10
−2
Fig 4.
Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
BT151-500L_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 2 March 2009
4 of 11
NXP Semiconductors
BT151-500L
SCR, 12 A, 5mA, 500 V, SOT78
160
I
TSM
(A)
120
003aab829
80
I
T
I
TSM
40
t
t
p
T
j
initial = 25
°C
max
0
1
10
10
2
number of cycles
10
3
Fig 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
-
Typ
-
Max
1.3
Unit
K/W
thermal resistance from see
Figure 6
junction to mounting
base
thermal resistance from
junction to ambient free
air
R
th(j-a)
-
60
-
K/W
10
Z
th(j-mb)
(K/W)
001aaa962
1
10
−1
P
δ
=
t
p
T
10
−2
t
p
T
t
10
−3
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 6.
Transient thermal impedance from junction to mounting base as a function of pulse width
BT151-500L_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 2 March 2009
5 of 11
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