GS8161FZ18/32/36BD
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
• Fully pin-compatible with flow through NtRAM™, NoBL™
and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard 165-bump FP-BGA package
• RoHS-compliant 165-bump BGA package available
18Mb Flow Through
Synchronous NBT SRAM
5.5 ns–7.5 ns
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Functional Description
The GS8161FZ18/32/36BD is an 18Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other flow through read/single late write SRAMs, allow
utilization of all available bus bandwidth by eliminating the
need to insert deselect cycles when the device is switched from
read to write cycles.
Ne
w
Parameter Synopsis
-5.5
5.5
5.5
225
255
De
sig
me
nd
ed
for
Flow Through
2-1-1-1
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
Rev: 1.00a 2/2008
No
t
Re
co
m
1/28
n—
Di
sco
nt
inu
ed
Pr
od
u
-6.5
6.5
6.5
200
220
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8161FZ18/32/36BD is configured to operate in Flow
Through mode.
The GS8161FZ18/32/36BDis implemented with GSI's high
performance CMOS technology and is available in JEDEC-
standard 165-bump FP-BGA package.
-7.5
7.5
7.5
185
205
Unit
ns
ns
mA
mA
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ct
© 2006, GSI Technology
GS8161FZ18/32/36BD
GS8161FZ18/32/36BD 165-Bump BGA Pin Description
Symbol
A
0
, A
1
A
DQ
A
DQ
B
DQ
C
DQ
D
B
A
, B
B
, B
C
, B
D
NC
CK
CKE
W
E
1
E
3
E
2
G
ADV
ZZ
LBO
TMS
TDI
TDO
TCK
MCH
V
DD
V
SS
V
DDQ
Type
I
I
I/O
I
—
I
I
I
I
I
I
I
I
I
I
I
I
O
I
—
I
I
I
Description
Address field LSBs and Address Counter Preset Inputs
Address Inputs
Data Input and Output pins
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D
I/Os; active low
No Connect
Clock Input Signal; active high
Write Enable; active low
Chip Enable; active low
Chip Enable; active low
Clock Input Buffer Enable; active low
Burst address counter advance enable; active high
De
sig
Linear Burst Order mode; active low
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Must Connect High
Core power supply
I/O and Core Ground
Output driver power supply
Rev: 1.00a 2/2008
No
t
Re
co
m
me
nd
ed
for
Ne
w
5/28
n—
Di
sco
nt
inu
ed
Pr
od
u
Chip Enable; active high
Output Enable; active low
Sleep mode control; active high
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ct
© 2006, GSI Technology
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
