INTEGRATED CIRCUITS
SA621
1GHz - Low voltage LNA, mixer and VCO
Product specification
IC17 Data handbook
1997 Nov 07
Philips
Semiconductors
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
DESCRIPTION
The SA621 is a combined low-noise amplifier, mixer and VCO
designed for high-performance low-power communication systems
from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise
figure at 881MHz with 15dB gain and an IP3 intercept of -7dBm at
the input. The gain is stabilized by on-chip compensation to vary
less than
±0.2dB
over -40 to +85°C temperature range. The
wide-dynamic-range mixer has a 12dB noise figure and IP3 of
+4.5dBm at the input at 881MHz. The integrated VCO circuit with
external resonator produces a high quality LO signal that drives the
mixer and is buffered to an external PLL synthesizer IC. The
nominal current drawn from a single 3V supply is 13.3mA.
Additionally, the entire circuit can be powered down to further reduce
the supply current to less than 20µA.
PIN CONFIGURATION
PD1 1
PD2 2
GND 3
LO OUT 4
GND 5
GND 6
TANK 7
GND 8
GND 9
BYPASS 10
20 MIXER OUT
19 MIXER OUT
18 GND
17 MIXER IN
16 GND
15 LNA IN
14 GND
13 LNA OUT
12 V
CC
11 GND
FEATURES
•
Low current consumption
•
Outstanding gain and noise figure
•
Excellent gain stability versus temperature and supply voltage
•
LNA, mixer and VCO power down capability
•
Monotonic VCO frequency vs control voltage
SR01429
Figure 1. Pin Configuration
APPLICATIONS
•
900MHz cellular and cordless front-end
•
Spread spectrum receivers
•
RF data links
•
UHF frequency conversion
•
Portable radio
TEMPERATURE RANGE
-40 to +85
°
C
ORDER CODE
SA621DH
DWG #
SOT360-1
ORDERING INFORMATION
DESCRIPTION
20-Pin Thin Shrink Small Outline Package (Surface-mount, TSSOP)
BLOCK DIAGRAM
MIXER
OUT
MIXER
OUT
GND
MIXER
IN
GND
LNA
IN
GND
LNA
OUT
V
CC
GND
20
10pF
19
10pF
18
17
16
15
14
13
12
11
LNA
1
PD1
2
PD2
3
GND
4
LO
OUT
5
GND
6
GND
7
TANK
8
GND
9
GND
10
BYPASS
SR01428
Figure 2. SA621 Block Diagram
1997 Nov 07
2
853-1849 018660
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
V
IN
P
D
T
JMAX
P
MAX
T
STG
Supply voltage
1
Voltage applied to any other pin
Power dissipation, T
A
= 25°C (still air)2
20-Pin Plastic SSOP
Maximum operating junction temperature
Maximum power input/output
Storage temperature range
PARAMETER
RATING
-0.3 to +6
-0.3 to (V
CC
+ 0.3)
980
150
+20
–65 to +150
UNITS
V
V
mW
°C
dBm
°C
NOTE:
1. Transients exceeding 8V on V
CC
pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θ
JA
: 20-Pin SSOP = 110°C/W
3. Pins 19 and 20 are ESD sensitive (mixer outputs).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
T
A
T
J
Supply voltage
Operating ambient temperature range
Operating junction temperature
PARAMETER
RATING
2.7 to 5.5
-40 to +85
-40 to +105
UNITS
V
°C
°C
DC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0V, T
A
= 25
°
C; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Full power-on
LNA powered-down
I
CC
Su ly
Supply current
Standby (VCO + bias)
Full power-down
V
T
V
IH
V
IL
I
IL
I
IH
PD logic threshold voltage
Logic 1 level
Logic 0 level
PD1 input current
PD2 input current
Enable = 0.4V
Enable = 2.4V
1.2
2.0
–0.3
10
10
MIN
TYP
13.3
10
5.7
20
1.6
1.8
V
CC
0.8
MAX
UNITS
mA
mA
mA
µA
V
V
V
µA
µA
1997 Nov 07
3
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
AC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0V, T
A
= 25
°
C; RF
IN
= 881MHz, f
VCO
= 964MHz; unless otherwise stated.
LIMITS
SYMBOL
Low Noise Amplifier
f
RF
S
21
S
21
∆S
21
/∆T
∆S
21
/∆f
S
12
S
11
S
22
P
-1dB
IP3
NF
t
ON
t
OFF
Mixer
PG
C
S
11M
NF
M
P
-1dB
IP3
M
IP
2INT
P
RFM-IF
P
LO-IF
P
LO-RFM
P
LO-RF
Mixer power conversion gain: R
P
= R
L
= 1.2kΩ,
Mixer input match
Mixer SSB noise figure
Mixer input 1dB gain compression
Mixer input third order intercept
Mixer input second order intercept
Mixer RF feedthrough
LO feedthrough to IF
LO to mixer input feedthrough
LO to LNA input feedthrough
RF
IN
= -25dBm
LO = -10dBm
f
RF
= 881MHz, f
LO
= 964MHz,
f
IF
= 83MHz
Ext. impedance matching req.
8.7
-10
12
-10
4.5
15
-41
-23
-52
-38
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
RF input frequency range
Amplifier gain
Amplifier gain in power-down mode
Gain temperature sensitivity enabled
Gain frequency variation
Amplifier reverse isolation
Amplifier input match
Amplifier output match
Amplifier input 1dB gain compression
Amplifier input third order intercept
Amplifier noise figure
Amplifier turn-on time (Enable Lo
→
Hi)
Amplifier turn-off time (Enable Hi
→
Lo)
800MHz - 1.0GHz
@ 881 MHz
With ext. impedance matching
800
15
-28
0.006
±0.013
-28
-10
-10
-20
-7
1.7
120
0.3
1000
MHz
dB
dB
dB/°C
dB/MHz
dB
dB
dB
dBm
dBm
dB
µs
µs
PARAMETER
TEST CONDITIONS
–3ó
TYP
+3ó
UNITS
Voltage Controlled Oscillator (VCO)
1
f
VCO
P
VCO
VCO frequency range
VCO power out
VCO phase noise
2
hase
Harmonic content
Residual modulation
Pulling figure
Pushing figure
Overall System
G
SYS
System gain
LNA + Mixer
23.0
23.7
24.4
dB
VSWR=2:1, all phases
±500
±100
See Figure 3
Offset = 30kHz
Offset = 60kHz
883
-10
-8
-109
-115
-22
45
dBc/Hz
dBc
dB
kHz
kHz/V
1083
MHz
dBm
NOTES:
1. VCO performance dependent on external components.
2. Based on copper-plated 2mm ceramic resonator (1/4 wave), f = 1025MHz, and can be improved by silver-plated or larger resonators.
1997 Nov 07
4
Philips Semiconductors
Product specification
1GHz low voltage LNA, mixer and VCO
SA621
Table 1. Power ON/OFF Control Logic
PD1
0
0
1 or open
1 or open
PD2
0
1 or open
0
1 or open
Full chip power-down
VCO on, Mixer on, LNA power-down
VCO on, LNA and Mixer power-down
Full chip power-on (default)
C1
100pF
L6
12nH
C3
6.8pF
IFOUT
L1
560nH
C2
10nF
C10
2.2pF
L3
6.8nH
C11 10nF
C14
6.8pF
17
MIXER
IN
16
GND
15
LNA
IN
C8
10nF
C13
33pF
+
–
VCC
3V
C9
0.1µF
L4
560nH
20
MIXER
OUT
19
MIXER
OUT
18
GND
14
GND
13
LNA
OUT
12
VCC
11
GND
SA621
C4
2.2pF
PD1
1
PD2
2
GND
3
LOOUT
4
GND
5
GND
6
TANK
7
GND
8
GND
9
BYPASS
10
MURATA 2mm
1/4 WAVE
FREQ=1025MHz
D1
VCO
CONTROL
R2
C6
10nF
24Ω
C12
100pF
VCOOUT
C10
220pF
C5
.5pF
L7
18.5nH
Hi–Q
R1
5.1kΩ
D7
10nF
SR01424
Figure 3. SA621 Applications Circuit
1997 Nov 07
5
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
