Datasheet> 器件分类 > 分立半导体> 二极管> UZV950V2TA

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UZV950V2TA: 产品描述Variable Capacitance Diode, 7.05pF C(T), 12V, Silicon, Hyperabrupt, SURFACE MOUNT PACKAGE-2; 产品类别分立半导体二极管; 文件大小62KB，共6页; 制造商Diodes Incorporated

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UZV950V2TA概述

Variable Capacitance Diode, 7.05pF C(T), 12V, Silicon, Hyperabrupt, SURFACE MOUNT PACKAGE-2

UZV950V2TA规格参数

参数名称	属性值
包装说明	R-PDSO-F2
针数	2
Reach Compliance Code	unknown
ECCN代码	EAR99
最小击穿电压	12 V
配置	SINGLE
二极管电容容差	10.64%
最小二极管电容比	2
标称二极管电容	7.05 pF
二极管元件材料	SILICON
二极管类型	VARIABLE CAPACITANCE DIODE
JESD-30 代码	R-PDSO-F2
JESD-609代码	e3
湿度敏感等级	1
元件数量	1
端子数量	2
最高工作温度	85 °C
最低工作温度	-55 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
最大功率耗散	0.25 W
认证状态	Not Qualified
最小质量因数	250
表面贴装	YES
端子面层	MATTE TIN
端子形式	FLAT
端子位置	DUAL
处于峰值回流温度下的最长时间	40
变容二极管分类	HYPERABRUPT
Base Number Matches	1

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950 series

SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES

ZV950V2, ZV952V2, ZV953V2, ZMDC953, FSD273

Device Description

A range of silicon varactor diodes for use in frequency control and

filtering. Featuring closely controlled CV characteristics, low voltage

operation and high Q. Low reverse current ensures very low phase

noise performance. These parts can be used with control voltages from

0.5V to 2.5V, making them ideal for 3 volt systems. Available in

miniature surface mount packages.

Features

•

Close tolerance C-V characteristics

•

Tuning from 0.5 to 2.5 Volts to suit 3 volt systems

•

Low I

(typically 10pA)

•

Excellent phase noise performance

•

High Q at low voltage

•

Miniature surface mount packages

•

Band selection for DAB applications - FSD273

Applications

•

VCXO and TCXO

•

Wireless communications

•

Pagers

•

Mobile radio

•

Digital Radio receivers

ISSUE 2 - MAY 2002

UZV950V2TA相似产品对比

	UZV950V2TA	UZV952V2TA	UZMDC953TA	UZV953V2TA	FSD273TA-C	UFSD273TA
描述	Variable Capacitance Diode, 7.05pF C(T), 12V, Silicon, Hyperabrupt, SURFACE MOUNT PACKAGE-2	Variable Capacitance Diode, 14.2pF C(T), 12V, Silicon, Hyperabrupt, SURFACE MOUNT PACKAGE-2	Variable Capacitance Diode, 33.5pF C(T), 12V, Silicon, Hyperabrupt, SURFACE MOUNT PACKAGE-3	Variable Capacitance Diode, 33.5pF C(T), 12V, Silicon, Hyperabrupt, SURFACE MOUNT PACKAGE-2	VARACTOR DIODE,DUAL, COMMON CATHODE,SOT-323	Variable Capacitance Diode, 33.5pF C(T), 12V, Silicon, Hyperabrupt, SURFACE MOUNT PACKAGE-3
Reach Compliance Code	unknown	unknown	compliant	unknown	compliant	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
二极管类型	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
JESD-609代码	e3	e3	e3	e3	e3	e3
湿度敏感等级	1	1	1	1	1	1
最小质量因数	250	250	250	200	250	250
表面贴装	YES	YES	YES	YES	YES	YES
端子面层	MATTE TIN	MATTE TIN	Matte Tin (Sn)	MATTE TIN	Matte Tin (Sn)	MATTE TIN
Base Number Matches	1	1	1	1	1	1
包装说明	R-PDSO-F2	R-PDSO-F2	R-PDSO-G3	R-PDSO-F2	-	R-PDSO-G3
针数	2	2	3	2	-	3
最小击穿电压	12 V	12 V	12 V	12 V	-	12 V
配置	SINGLE	SINGLE	COMMON CATHODE, 2 ELEMENTS	SINGLE	-	COMMON CATHODE, 2 ELEMENTS
二极管电容容差	10.64%	10.56%	10.45%	10.45%	-	10.45%
最小二极管电容比	2	2	2	2	-	2
标称二极管电容	7.05 pF	14.2 pF	33.5 pF	33.5 pF	-	33.5 pF
二极管元件材料	SILICON	SILICON	SILICON	SILICON	-	SILICON
JESD-30 代码	R-PDSO-F2	R-PDSO-F2	R-PDSO-G3	R-PDSO-F2	-	R-PDSO-G3
元件数量	1	1	2	1	-	2
端子数量	2	2	3	2	-	3
最高工作温度	85 °C	85 °C	85 °C	85 °C	-	85 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-	-55 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
峰值回流温度（摄氏度）	260	260	260	260	-	260
最大功率耗散	0.25 W	0.25 W	0.3 W	0.25 W	-	0.3 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
端子形式	FLAT	FLAT	GULL WING	FLAT	-	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	-	DUAL
处于峰值回流温度下的最长时间	40	40	40	40	-	40
变容二极管分类	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	-	HYPERABRUPT

UZV950V2TA

UZV950V2TA概述

UZV950V2TA规格参数

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UZV950V2TA相似产品对比

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