ADVANCE INFORMATION
30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP3A17E6
SUMMARY
V
(BR)DSS
= -30V; R
DS(ON)
= 0.07
I
D
= -4.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT23-6
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23-6 package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMP3A17E6TA
ZXMP3A17E6TC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
PINOUT
DEVICE MARKING
•
317
Top View
ISSUE 2 - JUNE 2003
1
SEMICONDUCTORS
ZXMP3A17E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V
GS
=10V; T
A
=25°C (b)
V
GS
=10V; T
A
=70°C (b)
V
GS
=10V; T
A
=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
ADVANCE INFORMATION
LIMIT
-30
20
-4.0
-3.2
-3.2
-14.4
-2.5
-14.4
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 2 - JUNE 2003
SEMICONDUCTORS
2
ADVANCE INFORMATION
CHARACTERISTICS
ZXMP3A17E6
1.2
10
Max Power Dissipation (W)
-I
D
Drain Current (A)
R
DS(ON)
Limited
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
1
DC
1s
100ms
10ms
1ms
100us
100m
10m
0.1
Single Pulse, T
amb
=25°C
1
10
P-channel Safe Operating Area
-V
DS
Drain-Source Voltage (V)
Temperature (°C)
Derating Curve
Thermal Resistance (°C/W)
100
80
D=0.5
60
40
20
0
100µ 1m
10m 100m
Single Pulse
D=0.2
D=0.05
D=0.1
MaximumPower (W)
100
Single Pulse
T
amb
=25°C
10
1
100µ 1m
10m 100m
1
10
100
1k
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 2 - JUNE 2003
3
SEMICONDUCTORS
ZXMP3A17E6
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
(1)
Forward Transconductance
(1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
ADVANCE INFORMATION
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
V
SD
t
rr
Q
rr
-30
-0.5
100
-1.0
0.070
0.110
6.4
V
A
nA
V
I
D
=-250 A, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =-250 A, V
DS
= V
GS
D
V
GS
=-10V, I
D
=-3.2A
V
GS
=-4.5V, I
D
=-2.5A
V
DS
=-15V,I
D
=-3.2A
S
630
113
78
pF
pF
pF
V
DS
=-15V, V
GS
=0V,
f=1MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
1.74
2.87
29.2
8.72
8.28
15.8
1.84
2.8
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-3.2A
V
DS
=-15V,V
GS
=-5V,
I
D
=-3.2A
V
DD
=-15V, I
D
=-1A
R
G
≅6.0
, V
GS
=-10V
-0.85
19.5
16.3
-1.2
V
ns
nC
T
J
=25°C, I
S
=-2.5A,
V
GS
=0V
T
J
=25°C, I
F
=-1.7A,
di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JUNE 2003
SEMICONDUCTORS
4
ADVANCE INFORMATION
TYPICAL CHARACTERISTICS
ZXMP3A17E6
T = 25°C
10V
5V
T = 150°C
10V
-I
D
Drain Current (A)
1
2.5V
-V
GS
2V
-I
D
Drain Current (A)
10
4V
5V
3.5V
3V
10
4V
3.5V
3V
2.5V
2V
1
-V
GS
1.5V
0.1
0.1
0.01
0.1
-V
DS
Drain-Source Voltage (V)
1
10
0.01
0.1
-V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
1.4
Normalised R
DS(on)
and V
GS(th)
Output Characteristics
V
GS
= -10V
I
D
= -3.2A
R
DS(on)
10
-I
D
Drain Current (A)
1.2
1.0
T = 150°C
1
T = 25°C
V
GS(th)
0.8
V
GS
= V
DS
I
D
= -250uA
0.1
1
2
-V
DS
= 10V
3
4
0.6
-50
0
50
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
(Ω)
2V
-V
GS
T = 25°C
2.5V
3V
3.5V
Normalised Curves v Temperature
10
-I
SD
Reverse Drain Current (A)
10
T = 150°C
1
T = 25°C
1
4V
5V
10V
0.1
0.1
0.1
1
10
0.01
0.2
On-Resistance v Drain Current
-I
D
Drain Current (A)
-V
SD
Source-Drain Voltage (V)
0.4
0.6
0.8
1.0
1.2
Source-Drain Diode Forward Voltage
ISSUE 2 - JUNE 2003
5
SEMICONDUCTORS
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