ZXTDC3M832
MPPS™ Miniature Package Power Solutions
DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR
COMBINATION
SUMMARY
NPN
V
CEO
= 50V; R
SAT
= 68m ;
C
= 4A
V
CEO
=-40V; R
SAT
= 104m ;
C
= -3A
PNP
DESCRIPTION
Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline,
these new 4
th
generation low saturation dual transistors offer extremely low on
state losses making them ideal for use in DC-DC circuits and various driving
and power management functions.
Additionally users gain several other
key benefits:
Performance capability equivalent to much larger packages
3mm x 2mm (Dual die) MLP
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
Reduced component count
C2
C1
FEATURES
•
Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
(100mV @1A--NPN)
•
h
FE
characterised up to 6A
•
I
C
=4A Continuous Collector Current
•
3mm x 2mm MLP
B2
B1
E2
E1
APPLICATIONS
•
DC - DC Converters
•
Charging circuits
•
Power switches
•
Motor control
•
CCFL Backlighting
PINOUT
ORDERING INFORMATION
DEVICE
ZXTDC3M832TA
ZXTDC3M832TC
REEL
7
13
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000
10000
3mm x 2mm MLP
underside view
DEVICE MARKING
DC3
ISSUE 1 - JUNE 2002
1
ZXTDC3M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current (a)(f)
Base Current
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
P
D
P
D
P
D
P
D
P
D
T
j
:T
stg
NPN
100
50
7.5
6
4
1000
1.5
12
2.45
19.6
1
8
1.13
9
1.7
13.6
3
24
-55 to +150
PNP
-50
-40
-7.5
-4
-3
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached.
The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed
pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
SYMBOL
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
VALUE
83.3
51
125
111
73.5
41.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
ISSUE 1 - JUNE 2002
2
ZXTDC3M832
TYPICAL CHARACTERISTICS
10
I
C
Collector Current (A)
10
I
C
Collector Current (A)
V
CE(SAT)
Limited
V
CE(SAT)
Limited
1
1
DC
1s
100ms
10ms
Note (a)(f)
Single Pulse, T
amb
=25°C
1ms
100us
DC
1s
100ms
10ms
Note (a)(f)
Single Pulse, T
amb
=25°C
1ms
100us
0.1
0.1
0.01
0.1
0.01
0.1
1
10
100
1
10
V
CE
Collector-Emitter Voltage (V)
V
CE
Collector-Emitter Voltage (V)
NPN Safe Operating Area
3.5
PNP Safe Operating Area
Max Power Dissipation (W)
2oz Cu
Note (e)(g)
T
amb
=25°C
Thermal Resistance (°C/W)
80
60
Note (a)(f)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1oz Cu
Note (d)(f)
2oz Cu
Note (a)(f)
1oz Cu
Note (d)(g)
D=0.5
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
3.5
3.0
Derating Curve
225
200
175
150
125
100
75
50
25
0
0.1
Thermal Resistance (°C/W)
P
D
Dissipation (W)
2.5
2.0
1.5
1.0
0.5
0.0
0.1
T
amb
=25°C
T
j max
=150°C
Continuous
2oz copper
Note (f)
2oz copper
Note (g)
1oz copper
Note (f)
1oz copper
Note (g)
1oz copper
Note (f)
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (g)
1
10
100
1
10
100
Board Cu Area (sqcm)
Board Cu Area (sqcm)
Power Dissipation v Board Area
Thermal Resistance v Board Area
ISSUE 1 - JUNE 2002
3
ZXTDC3M832
NPN TRANSISTOR ELECTRICAL CHARACTERISTICS
(at Tamb = 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
10
70
145
115
225
270
1.00
0.94
200
300
200
100
100
400
450
400
225
40
165
12
170
750
20
MHz
pF
ns
ns
MIN.
100
50
7.5
TYP.
190
65
8.2
25
25
25
20
100
200
220
300
320
1.05
1.00
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=100 A
I
C
=10mA*
I
E
=100 A
V
CB
=80V
V
EB
=6V
V
CES
=40V
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=50mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=3A, I
B
=100mA*
I
C
=4A, I
B
=200mA*
I
C
=4A, I
B
=200mA*
I
C
=4A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=0.2A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=1A
I
B1
=I
B2
=10mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ISSUE 1 - JUNE 2002
4
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