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GBJ804

产品描述8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小59KB,共2页
制造商MIC
官网地址http://www.cnmic.com/
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GBJ804概述

8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

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SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER
GBJ8005 THRU GBJ810
FEATURES
VOLTAGE RANGE
CURRENT
50 to
1000
Volts
8.0 Amperes
GBJ
O
19.7-20.3
Plastic package has UL Flammability
Glassification 94V-0
Glass passivated chip junctions
High case dielectric strength of 1500 V
RMS
High surge current capability
High temperature soldering guaranteed
260℃/10 seconds, 0.375”(9.5mm) lead length
29.7-30.3
3.0×45
O
4.4-4.8
3.4-3.8
- 3 .4
.1
φ
3
5.0
Case: molded plastic body
Terminal: Plated leads solderable per MIL-STD-750
Method 2026
Mounting position: Any (Note 3)
Mounting Torque: 6 in
1bs max.
Weight: 0.26 ounce, 7.4 gram
3.8-4.2
17.0-18.0
MECHANICAL DATA
2.5±0.2
2.0-2.4
2.7-3.1
0.9-1.1
9.8-10.2
7.3-7.7 7.3-7.7
0.6-0.8
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load
For capacitive load derate current by 20%
GBJ
SYMBOLS GBJ
8005
801
GBJ
802
GBJ
804
GBJ
806
GBJ
808
GBJ
810
Maximum Reverse Peak Repetitive Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current, At T
C
=100℃ (Note 1)
Peak Forward Surge Current
8.3ms single half sine wave superimposed on
rated load (JEDEC Method)
Rating for Fusing (t<8.3ms)
Maximum Instantaneous Forward Voltage drop
Per bridge element 4.0A
T
A
=25℃
Maximum DC Reverse Current at
rated DC blocking voltage per element T
A
=125℃
Typical Junction Capacitance, per let (Note 2)
Typical Thermal Resistance (Note 4)
Operating Junction Temperature Range
Storage Temperature Range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
2
t
V
F
I
R
C
J
R
JA
T
J
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
8.0
170
166
1.0
5.0
500
600
420
600
800
560
800
1000
700
100
10.8-11.2
UNIT
Volts
Volts
Volts
Amps
Amps
A
2
s
Volts
μA
211.0
3.5
(-55 to +150)
(-55 to +150)
94.0
pF
℃/W
Notes:
1. Unit case mounted on 3.2×3.2×0.12” thick (8.2×8.2×0.3cm) A1. Plate heatdink
2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
3. Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat
Transfer with #6 screws
4.Unit mounted in free air, no heat sink on P.C.B. 0.5×0.5”(12×12mm) copper pads 0.375” (9.5mm) lead length
E-mail:
sales@cnmic.com
Web Site: www.cnmic.com

GBJ804相似产品对比

GBJ804 GBJ8005 GBJ801 GBJ802 GBJ810 GBJ808 GBJ806
描述 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 2.9 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

 
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