DC COMPONENTS CO., LTD.
R
MJD122
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for use in general purpose amplifier and
low speed switching applications.
TO-252(DPAK)
Pinning
1 = Base
2 = Collector
3 = Emitter
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
2
.063(1.60)
.055(1.40)
.077(1.95)
.065(1.65)
.022(0.55)
.018(0.45)
Absolute Maximum Ratings
(T
A
=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation(T
C
=25 C)
Junction Temperature
Storage Temperature
o
o
C)
Rating
100
100
5
8
20
+150
-55 to +150
Unit
V
V
V
A
W
o
o
.032
Max
(0.80)
1
.035
Max
(0.90)
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
.228(5.80)
.213(5.40)
.059(1.50)
.035(0.90)
.110(2.80)
.087(2.20)
.091
Typ
(2.30)
.024(0.60)
.018(0.45)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
V
BE(on)
h
FE1
h
FE2
C
ob
380µs, Duty Cycle
2%
Min
100
100
5
-
-
-
-
-
-
-
1K
100
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
10
10
2
2
4
4.5
2.8
12K
-
200
Unit
V
V
V
µA
µA
mA
V
V
V
V
-
-
pF
I
C
=1mA
Test Conditions
I
C
=30mA
I
E
=1mA
V
CB
=100V
V
CE
=50V
V
EB
=5V
I
C
=4A, I
B
=16mA
I
C
=8A, I
B
=80mA
I
C
=8A, I
B
=80mA
I
C
=4A, V
CE
=4V
I
C
=4A, V
CE
=4V
I
C
=8A, V
CE
=4V
V
CB
=10V, f=1MHz
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
Output Capacitance
(1)Pulse Test: Pulse Width
(1)
(1)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
