DC COMPONENTS CO., LTD.
R
MJD112
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for general purpose power and switching
such as output or driver stages in applications such
as switching regulators, converters, and amplifiers.
TO-252(DPAK)
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
2
.063(1.60)
.055(1.40)
.077(1.95)
.065(1.65)
.022(0.55)
.018(0.45)
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings
(T
A
=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation(T
C
=25 C)
Junction Temperature
Storage Temperature
o
o
C)
Rating
100
100
5
2
20
+150
-55 to +150
Unit
V
V
V
A
W
o
o
.032
Max
(0.80)
.035
Max
(0.90)
.110(2.80)
.087(2.20)
.091
Typ
(2.30)
.024(0.60)
.018(0.45)
1
2
3
.228(5.80)
.213(5.40)
.059(1.50)
.035(0.90)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
I
CBO
I
CEO
I
EBO
(1)
Min
100
100
-
-
-
-
-
500
1K
200
-
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
10
20
2
2.5
2.8
-
12K
-
100
Unit
V
V
µA
µA
mA
V
V
-
-
-
pF
I
C
=1mA
Test Conditions
I
C
=30mA
V
CB
=80V
V
CE
=50V
V
BE
=5V
I
C
=2A, I
B
=8mA
I
C
=2A, V
CE
=3V
I
C
=0.5A, V
CE
=3V
I
C
=2A, V
CE
=3V
I
C
=4A, V
CE
=3V
V
CB
=10V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
(1)
V
CE(sat)
V
BE(on)
h
FE1
h
FE2
h
FE3
C
ob
Output Capacitance
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
2%
单片机
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