DC COMPONENTS CO., LTD.
IRF630
R
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET
V
DSS
= 200 Volts
R
DS(ON)
= 0.4 Ohm
I
D
= 9.0 Amperes
Features
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
TO-220AB
.185(4.70)
.173(4.40)
.055(1.39)
.045(1.15)
.295(7.49)
.220(5.58)
Description
Designed for low voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
.151
Typ
(3.83)
.405(10.28)
.380(9.66)
Pinning
1 = Gate
2 = Drain
3 = Source
.625(15.87)
.570(14.48)
.350(8.90)
.330(8.38)
1
2
3
.640 Typ
(16.25)
Symbol
D
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
Typ
(2.54)
.024(0.60)
.014(0.35)
G
Dimensions in inches and (millimeters)
S
N-Channel MOSFET
Absolute Maximum Ratings
Characteristic
Drain Current @ T
C
=25
o
C
Gate-to-Source Voltage
Total Power Dissipation @ T
C
=25 C
Derate above 25
o
C
Operating Junction Temperature
Storage Temperature
Maximum Lead Temperature for Soldering Purposes,
1/8" from Case for 10 Seconds
o
Symbol
Continuous
Pulsed
I
D
I
DM
V
GS
P
D
T
J
T
STG
T
L
Rating
9.0
36
20
74
0.59
-55 to +150
-55 to +150
300
Unit
A
V
W
W/
o
C
o
o
o
C
C
C
IRF630
N-Channel Power MOSFET
Electrical Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Forward Leakage Current
Gate-Source Reverse Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Internal Source Inductance
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-On Time
Thermal Resistance
(T
J
= 25
o
C unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
V
SD
t
rr
t
on
Min
200
-
-
-
-
2.0
-
3.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
800
240
76
9.4
28
39
20
-
-
-
4.5
7.5
-
170
-
-
Max
-
25
250
100
-100
4.0
0.4
-
-
-
-
-
-
-
-
43
7.0
23
-
-
2.0
340
1.7
62
nH
nH
V
ns
Measured from the drain lead 0.25"
from package to center of die
Measured from the source lead 0.25"
from package to source bond pad
I
S
=9.0A, V
GS
=0V(Note)
I
F
=5.9A, di/dt=100A/µs(Note)
nC
V
DS
=160V, I
D
=5.9A, V
GS
=10V(Note)
ns
V
DD
=100V, I
D
=5.9A,
R
G
=12Ω, R
D
=16Ω(Note)
pF
V
DS
=25V, V
GS
=0V, f=1.0MHz
nA
V
Ω
S
Unit
V
µA
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=200V, V
GS
=0V
V
DS
=160V, V
GS
=0V, T
J
=125
o
C
V
GSF
=20V, V
DS
=0V
V
GSR
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=5.4A(Note)
V
DS
=50V, I
D
=5.4A(Note)
Intrinsic turn-on time is neglegible and dominated by inductance L
S
+L
D
o
Junction to Case
Junction to Ambient
300µs, Duty Cycle
R
θJC
R
θJA
2%
C/W -
Note: Pulse Test: Pulse Width
DC COMPONENTS CO., LTD.
R
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