Datasheet> 器件分类 > 分立半导体> 晶体管> TSM9NB50CZC0

TSM9NB50CZC0: 产品描述Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN; 产品类别分立半导体晶体管; 文件大小170KB，共7页; 制造商Taiwan Semiconductor; 官网地址http://www.taiwansemi.com/; 标准

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TSM9NB50CZC0概述

Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

TSM9NB50CZC0规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
雪崩能效等级（Eas）	208 mJ
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	500 V
最大漏极电流 (ID)	9 A
最大漏源导通电阻	0.85 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	36 A
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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TSM9NB50

500V N-Channel Power MOSFET

TO-220

ITO-220

Pin Definition:

1. Gate

2. Drain

3. Source

PRODUCT SUMMARY

(V)

DS(on)

(Ω)

500

0.85 @ V

=10V

(A)

General Description

The TSM9NB50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half

bridge.

Features

●

Low R

DS(ON)

0.85Ω (Max.)

Low gate charge typical @ 44nC (Typ.)

Improve dv/dt capability

Block Diagram

Ordering Information

Part No.

TSM9NB50CZ C0

TSM9NB50CI C0

Package

TO-220

ITO-220

Packing

50pcs / Tube

N-Channel MOSFET

Absolute Maximum Rating

(Ta = 25

C unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current *

Single Pulse Avalanche Energy (Note 2)

Operating Junction Temperature

Storage Temperature Range

* Limited by maximum junction temperature

Tc = 25ºC

Tc = 100ºC

Symbol

STG

Limit

500

±30

9.0

5.4

208

150

-55 to +150

Unit

ºC

Thermal Performance

Parameter

Thermal Resistance - Junction to Case

TO-220

ITO-220

Symbol

RӨ

Limit

0.9

3.1

62.5

Unit

C/W

Thermal Resistance - Junction to Ambient

TO-220 / ITO-220

Notes: Surface mounted on FR4 board t

≤

10sec

1/7

Version: A12

TSM9NB50CZC0相似产品对比

	TSM9NB50CZC0	TSM9NB50CIC0
描述	Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220, 3 PIN
是否Rohs认证	符合	符合
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	compliant
雪崩能效等级（Eas）	208 mJ	208 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	500 V	500 V
最大漏极电流 (ID)	9 A	9 A
最大漏源导通电阻	0.85 Ω	0.85 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3
元件数量	1	1
端子数量	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	36 A	36 A
表面贴装	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON

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