Datasheet> 器件分类 > 分立半导体> 晶体管> CEN-U45LEADFREE

CEN-U45LEADFREE: 产品描述Power Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT PACKAGE-3; 产品类别分立半导体晶体管; 文件大小420KB，共2页; 制造商Central Semiconductor; 标准

下载文档详细参数全文预览

CEN-U45LEADFREE概述

Power Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT PACKAGE-3

CEN-U45LEADFREE规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
零件包装代码	SFM
包装说明	ROHS COMPLIANT PACKAGE-3
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	2 A
集电极-发射极最大电压	40 V
配置	DARLINGTON
最小直流电流增益 (hFE)	4000
JEDEC-95代码	TO-202
JESD-30 代码	R-PSFM-T3
JESD-609代码	e3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	260
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子面层	MATTE TIN (315)
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	10
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	100 MHz
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

CEN-U45

w w w. c e n t r a l s e m i . c o m

NPN SILICON

DARLINGTON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CEN-U45 is a

NPN silicon Darlington transistor designed for general

purpose amplifier and driver applications where high

gain and high power dissipation is required.

MARKING: FULL PART NUMBER

TO-202 CASE

APPLICATIONS:

• Designed for general purpose

amplifiers and drivers

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

FEATURES:

• High Collector Current (2.0A)

• High DC Current Gain (25K MIN)

SYMBOL

VCBO

VCEO

VCES

VEBO

TJ, Tstg

UNITS

°C

°C/W

2.0

-65 to +150

62.5

12.5

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=30V

IEBO

VEB=10V

BVCBO

lC=100μA

BVCES

lC=100μA

BVEBO

lE=10μA

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

Cob

lC=1.0A, IB=2.0mA

lC=200mA, IB=2.0mA

lC=1.0A, IB=2.0mA

VCE=5.0V, IC=1.0A

VCE=5.0V,

IC=200mA

IC=500mA

lC=1.0A

25K

15K

4.0K

100

MAX

100

UNITS

1.5

1.0

2.0

150K

VCE=5.0V, lC=200mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

MHz

8.0

R2 (23-January 2012)

推荐资源

Renesas Synergy™低功耗S1JA微控制器，你知道吗？

器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多