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MT48LC32M4A2BB-75AT:G

产品描述Synchronous DRAM, 32MX4, 5.4ns, CMOS, PBGA60, 8 X 16 MM, LEAD FREE, PLASTIC, FBGA-60
产品类别存储    存储   
文件大小2MB,共74页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 全文预览

MT48LC32M4A2BB-75AT:G概述

Synchronous DRAM, 32MX4, 5.4ns, CMOS, PBGA60, 8 X 16 MM, LEAD FREE, PLASTIC, FBGA-60

MT48LC32M4A2BB-75AT:G规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码BGA
包装说明TFBGA,
针数60
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间5.4 ns
其他特性AUTO/SELF REFRESH
JESD-30 代码R-PBGA-B60
JESD-609代码e1
长度16 mm
内存密度134217728 bit
内存集成电路类型SYNCHRONOUS DRAM
内存宽度4
功能数量1
端口数量1
端子数量60
字数33554432 words
字数代码32000000
工作模式SYNCHRONOUS
最高工作温度105 °C
最低工作温度-40 °C
组织32MX4
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.2 mm
自我刷新YES
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度8 mm
Base Number Matches1

文档预览

下载PDF文档
128Mb: x4, x8, x16 SDRAM
Features
SDRAM
MT48LC32M4A2 – 8 Meg x 4 x 4 banks
MT48LC16M8A2 – 4 Meg x 8 x 4 banks
MT48LC8M16A2 – 2 Meg x 16 x 4 banks
For the latest data sheet, refer to Micron’s Web site:
www.micron.com
Features
• PC100- and PC133-compliant
• Fully synchronous; all signals registered on positive edge
of system clock
• Internal pipelined operation; column address can be
changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths (BL): 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto precharge, and
auto refresh modes
• Self refresh mode; standard and low power
• 64ms, 4,096-cycle refresh (commercial & industrial)
• 16ms, 4,096-cycle refresh (Automotive)
• LVTTL-compatible inputs and outputs
• Single +3.3 ±0.3V power supply
Figure 1:
54-Pin TSOP Pin Assignment
(Top View)
x16 x8 x4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
x4 x8 x16
-
-
NC
DQ0
NC
DQ0
V
DD
DQ0
-
V
DD
Q
NC
DQ1
DQ1 DQ2
-
VssQ
NC
DQ3
DQ2 DQ4
-
V
DD
Q
NC
DQ5
DQ3 DQ6
-
VssQ
NC
DQ7
V
DD
-
NC DQML
-
WE#
-
CAS#
-
RAS#
CS#
-
BA0
-
BA1
-
A10
-
A0
-
A1
-
A2
-
A3
-
V
DD
-
-
-
NC
NC
-
NC
DQ1
-
NC
-
NC
Options
• Configurations
32 Meg x 4 (8 Meg x 4 x 4 banks)
16 Meg x 8 (4 Meg x 8 x 4 banks)
8 Meg x 16 (2 Meg x 16 x 4 banks)
• Write recovery (
t
WR)
t
WR = “2 CLK”
1
• Package/Pinout
Plastic package – OCPL
2
54-pin TSOP II (400 mil)
54-pin TSOP II (400 mil) Pb-free
60-ball FBGA (8mm x 16mm)
60-ball FBGA (8mm x 16mm) Pb-free
54-ball VFBGA (8mm x 8mm)
54-ball VFBGA (8mm x 8mm) Pb-free
• Timing (cycle time)
7.5ns @ CL = 3 (PC133)
7.5ns @ CL = 2 (PC133)
6.0ns @ CL = 3 (x16 only)
• Self refresh
Standard
Low power
• Design revision
• Operating temperature range
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
Automotive (–40°C to +105°C)
Notes:
1.
2.
3.
4.
Refer to Micron technical note: TN-48-05.
Off-center parting line.
Consult Micron for availability.
x16 only.
Designator
32M4
16M8
8M16
A2
Notes:
-
-
-
-
-
-
-
-
-
-
-
-
-
Vss
DQ15 DQ7
VssQ
-
DQ14
NC
DQ13 DQ6
V
DD
Q
-
DQ12
NC
DQ11 DQ5
VssQ
-
DQ10
NC
DQ9 DQ4
V
DD
Q
-
DQ8
NC
-
Vss
-
NC
DQMH DQM
-
CLK
CKE
-
NC
-
A11
-
A9
-
A8
-
A7
-
A6
-
A5
-
A4
-
Vss
-
-
NC
-
NC
DQ3
-
NC
NC
-
NC
DQ2
-
NC
-
-
DQM
-
-
-
-
-
-
-
-
-
-
-
1. The # symbol indicates signal is active LOW. A dash (-) indicates
x8 and x4 pin function is same as x16 pin function.
TG
P
FB
3
BB
3
F4
4
B4
4
-75
-7E
-6A
None
L
:G
None
IT
3
AT
3
Table 1:
Address Table
32 Meg x 4
16 Meg x 8
4 Meg x 8 x 4
banks
4K
4K (A0–A11)
4 (BA0, BA1)
1K (A0–A9)
8 Meg x 16
2 Meg x 16 x 4
banks
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
8 Meg x 4 x 4
banks
4K
4K (A0–A11)
4 (BA0, BA1)
2K (A0–A9,
A11)
Configuration
Refresh count
Row addressing
Bank addressing
Column addressing
Table 2:
Key Timing Parameters
CL = CAS (Read) latency
Access Time
Speed
Grade
-6A
-7E
-7E
-75
-75
Clock
Frequency
167 MHz
143 MHz
133 MHz
133 MHz
100 MHz
CL = 2
5.4ns
6ns
CL = 3
5.4ns
5.4ns
5.4ns
Setup
Time
1.5ns
1.5ns
1.5ns
1.5ns
1.5ns
Hold
Time
0.8ns
0.8ns
0.8ns
0.8ns
0.8ns
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_1.fm - Rev. N 1/09 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

 
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