SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
MJW21191
DESCRIPTION
·With TO-247 package
·Complement to type MJW21192
·Wild area of safe operation
APPLICATIONS
·Designed for power audio output, high
power drivers in audio amplifiers
PINNING
PIN
1
2
3
Emitter
Collector
Base
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
MAX
-150
-150
-5
-8
-16
-2
100
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
0.65
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
MJW21191
SYMBOL
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=-10mA ;I
B
=0
-150
V
V
CE
(sat)
-1
V
CE
(sat)
-2
V
BE(ON)
Collector-emitter saturation voltage
I
C
=-4A; I
B
=-0.4A
-1.0
V
Collector-emitter saturation voltage
I
C
=-8A; I
B
=-1.6A
-2.0
V
Base-emitter on voltage
I
C
=-4A ; V
CE
=-2V
-2.0
V
I
CES
Collector cut-off current
V
CB
=-150V; I
E
=0
-10
µA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-10
µA
h
FE-1
DC current gain
I
C
=-4A ; V
CE
=-2V
15
100
h
FE-2
DC current gain
I
C
=-8A ; V
CE
=-2V
5
f
T
Transition frequency
I
C
=-1.0A ; V
CE
=-10V,f=1MHz
4.0
MHz
2
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