SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJL21194
DESCRIPTION
·With TO-3PL package
·Complement to type MJL21193
·Excellent gain linearity
APPLICATIONS
·Designed for high power audio output,disk
head positioners and linear applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Fig.1 simplified outline (TO-3PL) and symbol
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
MAX
400
250
5
16
30
5
200
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
0.7
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
MJL21194
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=100mA ;I
B
=0
250
V
V
CE
(sat)
-1
V
CE
(sat)
-2
V
BE(ON)
Collector-emitter saturation voltage
I
C
=8A ;I
B
=0.8A
1.4
V
Collector-emitter saturation voltage
I
C
=16A ;I
B
=3.2A
4.0
V
Base-emitter on voltage
I
C
=8A ; V
CE
=5V
2.2
V
I
CEX
Collector cut-off current
V
CE
=250V; V
BE(
off
)
=1.5V
V
CE
=200V; I
B
=0
100
µA
I
CEO
Collector cut-off current
100
µA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
100
µA
h
FE-1
DC current gain
I
C
=8A ; V
CE
=5V
25
75
h
FE-2
DC current gain
I
C
=16A ; V
CE
=5V
8
f
T
Transition frequency
I
C
=1A ; V
CE
=10V,f=1MHz
4
MHz
C
OB
Collector output capacitance
f=1MHz;V
CB
=10V,I
E
=0
500
pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJL21194
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
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