SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE3055T
DESCRIPTION
·With TO-220 package
·Complement to type MJE2955T
·DC current gain -h
FE
= 20–70 @ I
C
= 4 Adc
·Collector–emitter saturation voltage -
V
CE(sat)
= 1.1 Vdc (Max) @ I
C
= 4 Adc
APPLICATIONS
·Designed for general–purpose
switching and amplifier applications.
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
70
60
5
10
6
75
150
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.67
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=4A ;I
B
=0.4A
I
C
=10A ;I
B
=3.3A
I
C
=4A ; V
CE
=4V
V
CE
=30V; I
B
=0
V
CE
=70V; V
BE(off)
=1.5V
T
C
=150
V
CB
=70V; I
E
=0
T
C
=150
V
EB
=5V; I
C
=0
I
C
=4A ; V
CE
=4V
I
C
=10A ; V
CE
=4V
I
C
=0.5A ; V
CE
=10V
20
5.0
2.0
MIN
60
SYMBOL
V
CEO(SUS)
V
CE
(sat)
-1
V
CE
(sat)
-2
V
BE
I
CEO
I
CEX
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
MJE3055T
TYP.
MAX
UNIT
V
1.1
8.0
1.8
0.7
1.0
5.0
1.0
10
5.0
100
V
V
V
mA
mA
mA
mA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJE3055T
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE3055T
4
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