SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Switching Regulators
·Inverters
·Solenoids
·Relay Drivers
·Motor Controls
·Deflection Circuits
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
MJ16018
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
T
C
=100
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
10
15
8
12
175
100
150
-55~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
VALUE
1.0
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector outoput capacitance
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=5A ;I
B
=2A
T
C
=110
I
C
=10A ;I
B
=5A
I
C
=5A ;I
B
=2A
T
C
=110
V
CEV
=1500V,V
BE(off)
=1.5Vdc
T
C
=100
V
CE
=1500V; R
BE
=50=
T
C
=100
V
EB
=6V; I
C
=0
I
C
=5A ; V
CE
=5V
f=1kHz ; V
CB
=10V
4
MIN
800
SYMBOL
V
CEO(SUS)
V
CE
(sat)
-1
V
CE
(sat)
-2
V
BE
(sat)
I
CEV
I
CER
I
EBO
h
FE
C
OB
MJ16018
TYP.
MAX
UNIT
V
1.0
1.5
5.0
1.5
1.5
0.25
1.50
2.5
0.1
V
V
V
mA
mA
mA
450
pF
Switching times resistive load
t
d
t
r
t
s
t
f
Delay time
Rise time
Storage time
Fall time
I
C
=5A; I
B1
= I
B2
=2.0A
V
CC
=250V ,R
B2
=3=
PW=25µs
Duty CycleC2%
0.085
0.90
4.5
0.2
0.2
2.0
9.0
0.4
µs
µs
µs
µs
2
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